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1. WO1999030373 - GaN-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF PRODUCING GaN-BASED CRYSTAL

Publication Number WO/1999/030373
Publication Date 17.06.1999
International Application No. PCT/JP1998/005479
International Filing Date 04.12.1998
Chapter 2 Demand Filed 24.06.1999
IPC
H01L 33/10 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
10with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/14 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
14with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/32 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
32containing nitrogen
H01S 5/323 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
32comprising PN junctions, e.g. hetero- or double- hetero-structures
323in AIIIBV compounds, e.g. AlGaAs-laser
H01S 5/20 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
20Structure or shape of the semiconductor body to guide the optical wave
CPC
H01L 33/007
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
005Processes
0062for devices with an active region comprising only III-V compounds
0066with a substrate not being a III-V compound
007comprising nitride compounds
H01L 33/025
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
025Physical imperfections, e.g. particular concentration or distribution of impurities
H01L 33/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
32containing nitrogen
H01S 2304/12
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
2304Special growth methods for semiconductor lasers
12Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
H01S 5/2077
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
20Structure or shape of the semiconductor body to guide the optical wave ; ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
2054Methods of obtaining the confinement
2077using lateral bandgap control during growth, e.g. selective growth, mask induced
H01S 5/32341
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
32comprising PN junctions, e.g. hetero- or double- heterostructures
323in AIIIBV compounds, e.g. AlGaAs-laser, ; InP-based laser
32308emitting light at a wavelength less than 900 nm
32341blue laser based on GaN or GaP
Applicants
  • MITSUBISHI CABLE INDUSTRIES, LTD. [JP]/[JP] (AllExceptUS)
  • HIRAMATSU, Kazumasa [JP]/[JP] (UsOnly)
  • OKAGAWA, Hiroaki [JP]/[JP] (UsOnly)
  • OUCHI, Yoichiro [JP]/[JP] (UsOnly)
  • MIYASHITA, Keiji [JP]/[JP] (UsOnly)
  • TADATOMO, Kazuyuki [JP]/[JP] (UsOnly)
Inventors
  • HIRAMATSU, Kazumasa
  • OKAGAWA, Hiroaki
  • OUCHI, Yoichiro
  • MIYASHITA, Keiji
  • TADATOMO, Kazuyuki
Agents
  • TAKASHIMA, Hajime
Priority Data
9/33703908.12.1997JP
9/33978010.12.1997JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) GaN-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF PRODUCING GaN-BASED CRYSTAL
(FR) DISPOSITIF LUMINEUX SEMI-CONDUCTEUR A BASE DE GaN ET PROCEDE DE PRODUCTION D'UN CRISTAL A BASE DE GaN
Abstract
(EN) A GaN-based light emitting device has a light emitting layer of GaN-based material whose composition is so specified that the material can emit ultraviolet radiation. The dislocation density of the light emitting layer is partly low. To lower the dislocation density the mask method is used. In a preferred mode, in a layer provided in the light emitting device and containing GaN-based crystals, AlyGa(1-y)N(0$m(f)y$m(F)1) is wholly used, and the number y of the composition is so determined that 'the energy Eg1 of light emitted from the light emitting layer' < 'the band gap energy Eg2 of the layers other than the light emitting layer'. Preferable incidental modes for emitting ultraviolet radiation efficiently include a mode in which, in addition to lowering the dislocation density of the light emitting layer, lowering the dislocation densities of an electrode forming face and a Bragg reflection layer is performed for protection. There is also disclosed a method of producing such a light emitting device. The method is characterized in that, to lower the dislocation density by the mask method, an alkyl chloride of a group III element is contained in the material gas fed for crystal growth to grow a layer covering a mask layer by MOCVD by the mask method. This production method is preferably used to form a layer covering a mask in the GaN-based light emitting device.
(FR) L'invention concerne un dispositif lumineux à base de GaN possédant une couche lumineuse de matière à base de GaN dont la composition est si spécifique que la matière peut émettre un rayonnement ultraviolet. La densité de dislocation de la couche lumineuse est en partie faible. Pour réduire la densité de dislocation, on utilise le procédé par masque. Dans un mode de réalisation préféré, on utilise pleinement, dans une couche du dispositif lumineux contenant des cristaux à base de GaN, AlyGa(1-y) N(0$m(f)y$m(F)1), le nombre y de la composition étant déterminé de telle sorte que 'l'énergie Eg1 de la lumière émise par la couche lumineuse' < 'l'énergie Eg2 de largeur de bande interdite des couches autres que la couche lumineuse'. De préférence, les modes fortuits d'émission efficace de rayonnement ultraviolet comprennent un mode dans lequel, outre la réduction de la densité de dislocation de la couche lumineuse, on effectue la réduction des densités de dislocation d'une face de formation d'électrode et d'une couche de réflexion de Bragg en vue d'une protection. L'invention concerne également un procédé de production du dispositif lumineux. Le procédé se caractérise par le fait que pour réduire la densité de dislocation par le procédé par masque, un chlorure d'alkyle d'un élément du groupe III est contenu dans la matière gazeuse introduite en vue d'une croissance cristalline et destinée à la croissance d'une couche couvrant une couche de masque par déposition chimique métal-oxyde en phase vapeur (MOCVD) grâce à la méthode par masque. Ce procédé de production est de préférence utilisé pour former une couche couvrant un masque dans le dispositif lumineux à base de GaN.
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US09581041This application is not viewable in PATENTSCOPE because the national phase entry has not been published yet or the national entry is issued from a country that does not share data with WIPO or there is a formatting issue or an unavailability of the application.
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