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Machine translation
1. (WO1999013519) CONSTRUCTION OF THIN FILM MAGNETO-RESISTORS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1999/013519    International Application No.:    PCT/GB1998/002653
Publication Date: 18.03.1999 International Filing Date: 03.09.1998
Chapter 2 Demand Filed:    01.04.1999    
IPC:
H01F 41/16 (2006.01), H01F 41/34 (2006.01), H01L 43/12 (2006.01)
Applicants: GREENBROOK ELECTRICAL PLC [GB/GB]; Temple Fields Harlow Essex CM20 2BG (GB) (For All Designated States Except US).
POWELL, Simon [GB/GB]; (GB) (For US Only)
Inventors: POWELL, Simon; (GB)
Agent: CRAWFORD, Andrew, Birkby; A.A. Thornton & Co. 235 High Holborn London WC1V 7LE (GB)
Priority Data:
9718915.3 05.09.1997 GB
Title (EN) CONSTRUCTION OF THIN FILM MAGNETO-RESISTORS
(FR) FABRICATION DE MAGNETORESISTANCES A COUCHE MINCE
Abstract: front page image
(EN)A thin film magneto-resistive device is formed by etching recesses in one major surface of a high temperature glass substrate so that the bottom of each recess is a predetermined distance from the other major surface of the substrate. The recesses and the one major surface are covered with a layer of permanent magnetic material so as to fill the recesses and the layer annealed. Thereafter, the thin film layer of NiFe is deposited and oriented. Finally, the excess permanent magnetic material is removed to leave permanent magnetic material in the recesses and form the device.
(FR)On forme un dispositif magnétorésistant à couche mince en gravant des rainures dans la première surface principale d'un substrat en verre haute température, de façon que le fond de chaque rainure se trouve à une distance prédéterminée de la seconde surface principale dudit substrat. On recouvre les rainures et la première surface principale avec une couche d'un matériau à aimantation permanente, de façon à remplir les rainures, et on recuit la couche. Puis on dépose et on oriente la couche mince de Ni-Fe. Enfin, on enlève l'excès de matériau à aimantation permanente, de façon à laisser dudit matériau dans les rainures et à former le dispositif.
Designated States: AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, CA, CH, CN, CU, CZ, DE, DK, EE, ES, FI, GB, GE, GH, GM, HR, HU, ID, IL, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MD, MG, MK, MN, MW, MX, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, UA, UG, US, UZ, VN, YU, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, SD, SZ, UG, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)