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Machine translation
1. (WO1999013479) METHOD OF PRODUCING SEMICONDUCTOR CERAMIC HAVING POSITIVE TEMPERATURE COEFFICIENT
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1999/013479    International Application No.:    PCT/JP1998/003922
Publication Date: 18.03.1999 International Filing Date: 02.09.1998
IPC:
H01C 7/02 (2006.01), H01C 17/065 (2006.01), H01C 17/30 (2006.01)
Applicants: TDK CORPORATION [JP/JP]; 13-1, Nihonbashi 1-chome Chuo-ku Tokyo 103-0027 (JP) (For All Designated States Except US).
TAKAHASHI, Chihiro [JP/JP]; (JP) (For US Only).
SATO, Shigeki [JP/JP]; (JP) (For US Only)
Inventors: TAKAHASHI, Chihiro; (JP).
SATO, Shigeki; (JP)
Agent: SARADA, Hideo; 2F, Tomiyamacho Sato Building 17, Kanda Tomiyamacho Chiyoda-ku Tokyo 101-0043 (JP)
Priority Data:
9/257457 05.09.1997 JP
Title (EN) METHOD OF PRODUCING SEMICONDUCTOR CERAMIC HAVING POSITIVE TEMPERATURE COEFFICIENT
(FR) PRODUCTION DE CERAMIQUE SEMI-CONDUCTRICE A COEFFICIENT DE TEMPERATURE POSITIF
Abstract: front page image
(EN)A method of producing a semiconductor ceramic having a positive temperature coefficient by preparing a calcined material containing main composition of a barium titanate semiconductor containing BaTiO¿3? as a chief component and substantially not containing Si, preparing additive compositions of Ba¿2?TiSi¿2?O¿8? and Ba¿n?Ti¿m?O¿n+2m? (1 $m(F) n $m(F) 4, 2 $m(F) m $m(F) 13, n < m), mixing the calcined material of the main composition and the additive compositions together, and firing the mixture. The product has excellent electric properties which are little affected by the variation in the production conditions, and has a guaranteed stable quality.
(FR)La présente invention concerne un procédé de production de céramique semi-conductrice à coefficient de température positif. Ce procédé consiste d'une part à préparer un composant principal semi-conducteur sensiblement asilicique, en l'occurrence un calcin de titanate de baryum tel que le BaTiO¿3?. Le procédé consiste d'autre part à préparer des additifs, en l'occurrence du Ba¿2?TiSi¿2?O¿8? et du Ba¿n?Ti¿m?O¿n+2m? tels que 1 $m(F) n $m(F) 4, 2 $m(F) m $m(F) 13, n < m. Le procédé consiste ensuite à mélanger le calcin composant principal avec les additifs, et à calciner le mélange. Ce produit, aux excellentes qualités électriques, n'est que peu affecté par les fluctuations des conditions de production, et présente une stabilité de qualité assurée.
Designated States: CN, KR, US.
European Patent Office (DE, FR, GB, NL).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)