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1. (WO1999013139) SINGLE CRYSTAL SiC AND PROCESS FOR PREPARING THE SAME

Pub. No.:    WO/1999/013139    International Application No.:    PCT/JP1998/003480
Publication Date: Mar 18, 1999 International Filing Date: Aug 5, 1998
IPC: C30B 1/00
Applicants: NIPPON PILLAR PACKING CO., LTD.

TANINO, Kichiya

Inventors: TANINO, Kichiya

Title: SINGLE CRYSTAL SiC AND PROCESS FOR PREPARING THE SAME
Abstract:
A β-SiC polycrystal plate (4) is formed by thermal CVD and stacked onto a unidirectionally regulated crystal orientation face (2a) of a plurality of sheetlike α-SiC single crystal pieces (2) bonded on one another in an intimately contacted state to prepare a composite (M). The composite (M) is heat-treated in the temperature range of from 1850 to 2400 °C to integrally grow a single crystal aligned in the same orientation as the crystal axis of each α-SiC single crystal piece (2) from the crystal orientation face (2a) of the α-SiC single crystal piece (2) towards the β-SiC polycrystal plate (4). Thus, a high-quality single crystal SiC substantially free from crystal nuclei, impurities and micropipe defects in the interface can be easily prepared with good efficiency.