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1. (WO1999005714) METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT CONTROLLED BY FIELD EFFECT
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/1999/005714 International Application No.: PCT/DE1998/002022
Publication Date: 04.02.1999 International Filing Date: 17.07.1998
Chapter 2 Demand Filed: 11.02.1999
IPC:
H01L 21/336 (2006.01) ,H01L 29/10 (2006.01) ,H01L 29/423 (2006.01) ,H01L 29/78 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
06
characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
10
with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
41
characterised by their shape, relative sizes or dispositions
423
not carrying the current to be rectified, amplified or switched
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
Applicants: STRACK, Helmut[AT/DE]; DE (UsOnly)
GASSEL, Helmut[DE/DE]; DE (UsOnly)
LARIK, Joost[DE/DE]; DE (UsOnly)
INFINEON TECHNOLOGIES AG[DE/DE]; St.-Martin-Strasse 53 D-81541 München, DE (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, JP, LU, MC, NL, PT, SE)
Inventors: STRACK, Helmut; DE
GASSEL, Helmut; DE
LARIK, Joost; DE
Priority Data:
197 31 496.122.07.1997DE
Title (EN) METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT CONTROLLED BY FIELD EFFECT
(FR) PROCEDE POUR LA FABRICATION D'UN COMPOSANT A SEMI-CONDUCTEURS COMMANDE PAR EFFET DE CHAMP
(DE) HERSTELLUNGSVERFAHREN FÜR EIN DURCH FELDEFFEKT GESTEUERTES HALBLEITERBAUELEMENT
Abstract:
(EN) The invention relates to a method for producing semiconductor components controlled by field effect e.g. but not exclusively MIS power transistors, wherein said semiconductor components comprise a substrate of a first capacity type, covered by a gate insulating layer. The inventive method for producing semiconductor components controlled by field effect and comprising a semiconductor substrate(1) of a first capacity type and a gate insulating layer(2) on the surface(3) of said substrate (1) consists inter alia in making a second capacity type trough(4) in the semiconductor substrate (1) by implanting first impurities and is characterized by steps undertaken to produce a semiconductor layer (8,9) of a first given thickness on the gate insulating layer (2) before producing the trough (4) and reducing the semiconductor layer (8,9) in a given area to obtain a residual layer (6) of a second given thickness, so that the semiconductor layer (9) acts as an implantation barrier outside the given area when the trough (4) is produced.
(FR) L'invention concerne un procédé pour la fabrication de composants à semi-conducteurs commandés par effet de champ, comme par exemple, mais pas exclusivement, des transistors de puissance MIS, ces composants comprenant un substrat d'un premier type de conduction, qui est recouvert d'une couche isolante de grille. Ce procédé pour la fabrication d'un composant à semi-conducteurs commandé par effet de champ et comportant un substrat (1) d'un premier type de conduction et une couche isolante de grille (2) sur la surface (3) du substrat (1), consistant entre autres à réaliser une cuvette (4) d'un deuxième type de conduction dans le substrat (1) par implantation de premières impuretés, est caractérisé par les étapes consistant à réaliser sur la couche isolante de grille (2) une couche semi-conductrice (8, 9) d'une première épaisseur prédéfinie, avant la réalisation de la cuvette (4), et à réduire cette couche semi-conductrice (8, 9) dans une région prédéfinie jusqu'à l'obtention d'une couche résiduelle (6) d'une deuxième épaisseur prédéfinie, de sorte que la couche semi-conductrice (9), en dehors de cette région prédéfinie, fasse office de barrière d'implantation lors de la réalisation de la cuvette (4).
(DE) Die Erfindung betrifft ein Verfahren zur Herstellung von durch Feldeffekt gesteuerten Halbleiterbauelementen, wie z.B. aber nicht ausschließlich MIS-Leistungstransistoren, wobei die Halbleiterbauelemente ein Halbleitersubstrat von einem ersten Leitungstyp umfassen, das von einer Gate-Isolatorschicht bedeckt ist. Das erfindungsgemäße Verfahren zum Herstellen eines durch Feldeffekt steuerbaren Halbleiterbauelements mit einem Halbleitersubstrat (1) von einem ersten Leitungstyp und einer Gate-Isolatorschicht (2) auf der Oberfläche (3) des Halbleitersubstrats (1), das unter anderem das Erzeugen einer Wanne (4) von einem zweiten Leitungstyp in dem Halbleitersubstrat (1) durch Implantieren von ersten Fremdatomen umfaßt, ist gekennzeichnet durch die Schritte: Erzeugen einer Halbleiterschicht (8, 9) mit einer ersten vorgegebenen Dicke auf der Gate-Isolatorschicht (2) vor dem Erzeugen der Wanne (4) und Reduzieren der Halbleiterschicht (8, 9) in einem vorgegebenen Bereich bis auf eine Restschicht (6) mit einer zweiten vorgegebenen Dicke, so daß die Halbleiterschicht (9) außerhalb des vorgegebenen Bereichs bei dem Erzeugen der Wanne (4) als Implantationsbarriere wirkt.
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Designated States: JP, US
European Patent Office (EPO) (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
Publication Language: German (DE)
Filing Language: German (DE)