Processing

Please wait...

Settings

Settings

Goto Application

1. WO1999005706 - A POLISHING COMPOSITION INCLUDING AN INHIBITOR OF TUNGSTEN ETCHING

Publication Number WO/1999/005706
Publication Date 04.02.1999
International Application No. PCT/US1998/015572
International Filing Date 27.07.1998
Chapter 2 Demand Filed 25.02.1999
IPC
C09G 1/02 2006.1
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
GPOLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SKI WAXES
1Polishing compositions
02containing abrasives or grinding agents
C09K 3/14 2006.1
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
3Materials not provided for elsewhere
14Anti-slip materials; Abrasives
C23F 3/00 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACES; INHIBITING CORROSION OF METALLIC MATERIAL; INHIBITING INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25247
3Brightening metals by chemical means
H01L 21/321 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
321After-treatment
CPC
C09G 1/02
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
GPOLISHING COMPOSITIONS
1Polishing compositions
02containing abrasives or grinding agents
C09K 3/1463
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
3Materials not provided for elsewhere
14Anti-slip materials; Abrasives
1454Abrasive powders, suspensions and pastes for polishing
1463Aqueous liquid suspensions
C23F 3/00
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
3Brightening metals by chemical means
H01L 21/306
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
H01L 21/3212
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
321After treatment
32115Planarisation
3212by chemical mechanical polishing [CMP]
Applicants
  • CABOT CORPORATION [US]/[US]
Inventors
  • GRUMBINE, Steven, K.
  • STREINZ, Christopher, C.
  • HOGLUND, Eric, W., G.
Agents
  • LANDO, Michelle, B.
Priority Data
08/901,80328.07.1997US
09/086,65929.05.1998US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) A POLISHING COMPOSITION INCLUDING AN INHIBITOR OF TUNGSTEN ETCHING
(FR) COMPOSITION DE POLISSAGE COMPORTANT UN INHIBITEUR DE GRAVURE DE TUNGSTENE
Abstract
(EN) A chemical mechanical polishing composition and slurry comprising a composition capable of etching tungsten and at least one inhibitor of tungsten etching and methods for using the composition and slurry to polish tungsten containing substrates.
(FR) L'invention concerne une composition et une boue de polissage mécanique chimique comportant une composition permettant de graver le tungstène, et au moins un inhibiteur de gravure de tungstène. L'invention concerne également des procédés d'utilisation de la composition et de la boue pour polir des substrats contenant du tungstène.
Latest bibliographic data on file with the International Bureau