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1. (WO1999004420) PROCESS FOR CLEANING SILICON SEMICONDUCTOR SUBSTRATES
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/1999/004420 International Application No.: PCT/JP1998/003228
Publication Date: 28.01.1999 International Filing Date: 17.07.1998
Chapter 2 Demand Filed: 15.02.1999
IPC:
H01L 21/306 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
Applicants:
HABUKA, Hitoshi [JP/JP]; JP (UsOnly)
OTSUKA, Toru [JP/JP]; JP (UsOnly)
SHIN-ETSU HANDOTAI CO., LTD. [JP/JP]; 4-2, Marunouchi 1-chome Chiyoda-ku Tokyo 100-0005, JP (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
Inventors:
HABUKA, Hitoshi; JP
OTSUKA, Toru; JP
Agent:
TATENO, Koichi; 10-4, Toranomon 3-chome Minato-ku Tokyo 105-0001, JP
Priority Data:
9/20971318.07.1997JP
Title (EN) PROCESS FOR CLEANING SILICON SEMICONDUCTOR SUBSTRATES
(FR) PROCEDE DE NETTOYAGE DE SUBSTRATS SEMI-CONDUCTEURS DE SILICIUM
Abstract:
(EN) A process for cleaning silicon semiconductor substrates by removing organic substances and metallic impurities adherent to a silicon semiconductor substrate while inhibiting the regrowth of a spontaneous surface oxide or the thermal diffusion of the metallic impurities. The process comprises conducting the decomposition of the adherent organic substances with HF gas and the conversion of the metallic impurities into metal chlorides with HCl gas, with H2 gas capable of keeping a reducing atmosphere being used as the carrier gas throughout the cleaning process. Both the treatment with HF gas and that with HCl gas give products having vapor pressures higher than those of the starting substances, so that the products can be vaporized in an atmosphere of H2 gas at a higher temperature. The cleaning temperature can be lowered to 1000 °C or below over the whole process. When these impurities adhere to the surface oxide, the surface oxide can be removed by treating, prior to the above treatments, the substrate with HF gas within a temperature range of lower than 100 °Cwhere the moisture adsorbed to the surface oxide can be retained, while the surface oxide can be made to remain by subjecting the substrate directly to the treatments with HF gas and HCl gas at a temperature of 100° C or above.
(FR) L'invention porte sur un procédé de nettoyage de substrats semi-conducteurs de silicium en en éliminant les impuretés les substances organiques et les impuretés métalliques y adhérant tout en empêchant la reconstitution spontanée d'un oxyde superficiel ou la diffusion thermique des impuretés métalliques. Le procédé consiste à décomposer les substances organiques adhérentes par du HF gazeux, et à et convertir les impuretés métalliques en chlorures métalliques par du HCl gazeux, tout en utilisant du H2 gazeux maintenant une atmosphère réductrice comme gaz support pendant tout le processus. Les traitements par le HF gazeux, et par le HCl gazeux donnent des produits dont la tension de vapeur dépasse celle des substances de départ, ce qui permet la vaporisation à plus haute température desdits produits dans l'atmosphère de H2 gazeux. La température de nettoyage peut être abaissée à 1000 °C ou moins pendant l'ensemble du processus. Lorsque les impuretés adhèrent à l'oxyde de surface ce dernier peut être éliminé par un traitement préalable au HF gazeux à une température inférieure à 100 °C, ce qui permet de retenir l'humidité adsorbée par l'oxyde superficiel tout en retenant l'oxyde superficiel en soumettant directement le substrat à des traitements par le HF gazeux, et par le HCl gazeux à des températures de 100 °C ou plus.
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Designated States: US
European Patent Office (EPO) (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)