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1. WO1999003308 - FREQUENCY SELECTED, VARIABLE OUTPUT INDUCTOR HEATER SYSTEM AND METHOD

Publication Number WO/1999/003308
Publication Date 21.01.1999
International Application No. PCT/US1998/014125
International Filing Date 08.07.1998
Chapter 2 Demand Filed 09.02.1999
IPC
C23C 16/46 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
46characterised by the method used for heating the substrate
C30B 25/10 2006.1
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02Epitaxial-layer growth
10Heating of the reaction chamber or the substrate
H01L 21/00 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H05B 6/06 2006.1
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
6Heating by electric, magnetic, or electromagnetic fields
02Induction heating
06Control, e.g. of temperature, of power
H05B 6/44 2006.1
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
6Heating by electric, magnetic, or electromagnetic fields
02Induction heating
36Coil arrangements
44having more than one coil or coil segment
CPC
C23C 16/46
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
46characterised by the method used for heating the substrate
C30B 25/10
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
02Epitaxial-layer growth
10Heating of the reaction chamber or the substrate
H01L 21/67109
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67098Apparatus for thermal treatment
67109mainly by convection
H05B 6/06
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
6Heating by electric, magnetic, or electromagnetic fields
02Induction heating
06Control, e.g. of temperature, of power
H05B 6/44
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
6Heating by electric, magnetic, or electromagnetic fields
02Induction heating
36Coil arrangements
44having more than one coil or coil segment
Applicants
  • ADVANCED ENERGY INDUSTRIES, INC. [US]/[US] (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, JP, KR, LU, MC, NL, PT, SE)
  • SCHATZ, Douglas, S. [US]/[US] (UsOnly)
  • DORRENBACHER, John, M. [US]/[US] (UsOnly)
Inventors
  • SCHATZ, Douglas, S.
  • DORRENBACHER, John, M.
Agents
  • SANTANGELO, Luke
Priority Data
60/052,02909.07.1997US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) FREQUENCY SELECTED, VARIABLE OUTPUT INDUCTOR HEATER SYSTEM AND METHOD
(FR) SYSTEME DE CHAUFFAGE PAR INDUCTION A SORTIE VARIABLE SELECTIONNEE EN FREQUENCE
Abstract
(EN) An induction heating system using a plurality of zones (7, 8, and 9) in a coil (1) provides selective heating control for better uniformity especially for semiconductor and other thin film processing applications. By arranging the zones (7, 8, and 9) to have different resonance frequencies, the power supply (20) may control the various zones (7, 8, and 9) by altering its frequency output. The power supply (20) may also act to control the differential heating by switching among zones in conjunction with the frequency control, by sweeping through a variety of frequencies, by simultaneously providing power over different frequencies, by altering the residence time at each frequency, or by outputting different powers to each frequency or the like. Each zone may thus be tuned as appropriate to achieve the desired induction heating characteristic.
(FR) L'invention concerne des systèmes de chauffage par induction utilisant une pluralité de zones (7, 8 et 9) dans une bobine (1), lequel système permet une commande sélective du chauffage en vue d'une meilleure uniformité, en particulier pour les applications de traitement des semi-conducteurs et autres films minces. En agençant les zones (7, 8 et 9) de sorte qu'elles aient des fréquences de résonance différentes, l'alimentation électrique (20) peut servir à commander les différentes zones (7, 8 et 9) en en modifiant la sortie en fréquence. L'alimentation électrique (20) peut également servir à commander le chauffage différentiel en changeant de zones et en changeant de commande de fréquence, en balayant une fourchette de fréquences, en alimentant simultanément en électricité différentes fréquences, en modifiant le temps de résidence pour chaque fréquence, ou en produisant en sortie différentes puissances pour chaque fréquence ou analogue. Chaque zone peut ainsi être réglée comme voulu de manière à obtenir les caractéristiques de chauffage par induction souhaitées.
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