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1. (WO1998053503) SELF-PROTECT THYRISTOR
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1998/053503 International Application No.: PCT/EP1998/002305
Publication Date: 26.11.1998 International Filing Date: 18.04.1998
Chapter 2 Demand Filed: 04.12.1998
IPC:
H01L 29/74 (2006.01) ,H01L 29/745 (2006.01) ,H01L 29/749 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
70
Bipolar devices
74
Thyristor-type devices, e.g. having four-zone regenerative action
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
70
Bipolar devices
74
Thyristor-type devices, e.g. having four-zone regenerative action
744
Gate-turn-off devices
745
with turn-off by field effect
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
70
Bipolar devices
74
Thyristor-type devices, e.g. having four-zone regenerative action
749
with turn-on by field effect
Applicants:
VISHAY SEMICONDUCTOR GMBH [DE/DE]; Theresienstrasse 2 D-74072 Heilbronn, DE (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, JP, LU, MC, NL, PT, SE)
CONSTAPEL, Rainer [DE/DE]; DE (UsOnly)
SCHLANGENOTTO, Heinrich [DE/DE]; DE (UsOnly)
XU, Shuming [CN/SG]; SG (UsOnly)
Inventors:
CONSTAPEL, Rainer; DE
SCHLANGENOTTO, Heinrich; DE
XU, Shuming; SG
Agent:
MAUTE, Hans-Jürgen; Daimler-Benz Aktiengesellschaft Intellectual Property Management Postfach 35 35 D-74025 Heilbronn, DE
Priority Data:
197 21 655.223.05.1997DE
Title (DE) THYRISTOR MIT SELBSTSCHUTZ
(EN) SELF-PROTECT THYRISTOR
(FR) THYRISTOR A AUTO PROTECTION
Abstract:
(DE) Bei einem Thyristor mit Selbstschutz mit einem in Serie mit dem Thyristor liegenden MOSFET (M1) und einem zweiten selbstgesteuerten MOSFET (M2) zwischen p-Basis des Thyristors und äußerer Kathode (KA) sind in einer Halbleiterscheibe mehrere Einheitszellen für die Thyristoren in Parallelschaltung angeordnet. Es ist vorgesehen, daß die Spannung am Serien-MOSFET (M1) als Indikator für Überstrom und Übertemperatur dient, daß ein weiterer MOSFET (M4) vorgesehen ist, dessen Source(-Gebiet) mit der Source des Serien-MOSFETs (M1), dessen Drain mit dem Gate des Serien-MOSFETs (M1) und dessen Gate mit dem Drain des Serien-MOSFETs (M1) leitend verbunden sind und daß zwischen der Gateelektrode (G1) des Serien-MOSFETs (M1) und dem Gate (G) des Bauelements ein Widerstand (Rg) vorgesehen ist.
(EN) The invention relates to a self-protect thyristor with a series-located MOSFET (M1) and a second self-controlled MOSFET (M2) between the p base of the thyristor and the external cathode (KA). Said thyristor is provided with several parallel-connected unit cells for the thyristors in a semiconductor disk. The invention provides that the voltage in the series MOSFET (M1) should serve to indicate over-voltage and overheating. An additional MOSFET(M4) is also provided whose source (area) is connected to the source of the series MOSFET (M1) and whose gate is conductively connected to the drain of the series MOSFET (M1). The invention also includes resistor (Rg) between the gate electrode (G1) of the series MOSFET (M1) and the gate of the component.
(FR) L'invention concerne un thyristor à autoprotection comportant un MOSFET (M1) branché en série et un deuxième MOSFET (M2) autoentretenu entre la base p du thyristor et la cathode externe (KA). Dans ce thyristor, plusieurs cellules unitaires destinées au thyristor sont montées en parallèle dans une tranche semiconductrice. La tension dans le MOSFET (M1) en série sert à indiquer un courant de surcharge et une élévation de température. Il est prévu un autre MOSFET (M4) dont la région de source est reliée à la source du MOSFET en série (M1), dont le drain est relié à la grille du MOSFET en série (M1) et dont la grille est reliée au drain du MOSFET en série (M1). Une résistance (Rg) est située entre l'électrode de grille (G1) du MOSFET en série (M1) et la grille (G) du composant.
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Designated States: JP, US
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
Publication Language: German (DE)
Filing Language: German (DE)
Also published as:
EP0983613US6423987