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1. (WO1998053502) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/1998/053502 International Application No.: PCT/JP1997/001714
Publication Date: 26.11.1998 International Filing Date: 22.05.1997
IPC:
H01L 21/285 (2006.01) ,H01L 21/331 (2006.01) ,H01L 29/08 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
283
Deposition of conductive or insulating materials for electrodes
285
from a gas or vapour, e.g. condensation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
328
Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors
33
the devices comprising three or more electrodes
331
Transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
06
characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
08
with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
Applicants:
KADOIWA, Kaoru [JP/JP]; JP (UsOnly)
UNEME, Yutaka [JP/JP]; JP (UsOnly)
MITSUBISHI DENKI KABUSHIKI KAISHA [JP/JP]; 2-3, Marunouchi 2-chome Chiyoda-ku Tokyo 100, JP (AllExceptUS)
Inventors:
KADOIWA, Kaoru; JP
UNEME, Yutaka; JP
Agent:
MIYATA, Kaneo ; Mitsubishi Denki Kabushiki Kaisha 2-3, Marunouchi 2-chome Chiyoda-ku Tokyo 100, JP
Priority Data:
Title (EN) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
(FR) DISPOSITIF A SEMI-CONDUCTEUR ET SON PROCEDE DE FABRICATION
Abstract:
(EN) The contact resistances of the electrodes of a semiconductor device, for example, the emitter and collector of an HBT are lowered by providing contact layers containing impurities at high concentration on a plurality of portions of a compound semiconductor layer isolated from each other by a prescribed crystal growth surface. A method for manufacturing the semiconductor device, comprising the steps of forming a recrystallization growth layer including a contact layer and having a predetermined crystal growth face, e.g., the (111)-B face or (311)-A face as a side face by selective growth adjacently to a part of a semiconductor element including a contact layer formed on a substrate having a prescribed crystal face, e.g., the (109) face, and isolating the contact layer. This semiconductor device is useful for high-output small power-consumption amplifiers for satellite communication or portable telephone sets for mobile communication.
(FR) Les résistances de contact des électrodes d'un dispositif à semi-conducteur, par exemple l'émetteur et le collecteur d'un transistor bipolaire à hétérojonction sont réduites au moyen de couches de contact contenant des impuretés en grande concentration sur plusieurs parties d'une couche à composé semi-conducteur, isolées les unes des autres par une surface de croissance de cristaux spécifiée. L'invention concerne un procédé de fabrication d'un dispositif à semi-conducteur, qui consiste à former une couche de croissance et de recristallisation comprenant une couche de contact et une face de croissance déterminée, par exemple, la face (111)-B ou la face (311)-A en tant que face latérale, par la croissance sélective de manière adjacente à une partie d'un élément à semi-conducteur comprenant une couche de contact formée sur un substrat ayant une face de cristal spécifiée, par exemple la face (109), et à isoler la couche de contact. Ce dispositif à semi-conducteur est utile pour les amplificateurs à faible consommation d'énergie et à puissance de sortie élevée pour la communication par satellite ou des postes téléphoniques portables pour la communication mobile.
Designated States: CN, JP, KR, US
European Patent Office (EPO) (AT, BE, CH, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)