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1. (WO1998053488) METHOD FOR POLISHING A COMPOSITE COMPRISING AN INSULATOR, A METAL, AND TITANIUM
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1998/053488 International Application No.: PCT/US1998/010252
Publication Date: 26.11.1998 International Filing Date: 19.05.1998
Chapter 2 Demand Filed: 15.12.1998
IPC:
C09G 1/02 (2006.01) ,C09K 3/14 (2006.01) ,C23F 3/00 (2006.01) ,H01L 21/321 (2006.01)
C CHEMISTRY; METALLURGY
09
DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
G
POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SKI WAXES
1
Polishing compositions
02
containing abrasives or grinding agents
C CHEMISTRY; METALLURGY
09
DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
K
MATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
3
Materials not provided for elsewhere
14
Anti-slip materials; Abrasives
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
F
NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACES; INHIBITING CORROSION OF METALLIC MATERIAL; INHIBITING INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25247
3
Brightening metals by chemical means
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3205
Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
321
After-treatment
Applicants:
RODEL HOLDINGS, INC. [US/US]; Suite 1300 1105 North Market Street Wilmington, DE 19899, US
Inventors:
SETHURAMAN, Anantha, R.; US
COOK, Lee, Melbourne; US
WANG, Huey-Ming; US
WU, Guangwei; US
Agent:
BENSON, Kenneth, A.; Rodel Holdings, Inc. Suite 1300 1105 North Market Street Wilmington, DE 19899, US
Priority Data:
08/859,13220.05.1997US
Title (EN) METHOD FOR POLISHING A COMPOSITE COMPRISING AN INSULATOR, A METAL, AND TITANIUM
(FR) PROCEDE DE POLISSAGE D'UN MATERIAU COMPOSITE COMPRENANT UN ISOLANT, UN METAL ET DU TITANE
Abstract:
(EN) A process is provided for polishing a composite comprised of an insulating layer (21), a metal (24), and titanium (22) in which the composite is polished in a polishing machine having a polishing pad (2) using an aqueous slurry (9) comprising submicron abrasive particles, an iodate, and a peroxide (10). Another process is provided in which peroxide (10) is added to the aqueous slurry (9) only when a titanium (22) or titanium nitride (23) layer is being polished. Further the invention also may comprise the addition of a base (11) to the slurry stream exiting the polishing machine to bring the pH of the used slurry to about 7 or higher.
(FR) Cette invention concerne un procédé de polissage d'un matériau composite qui se compose d'une couche isolante (21) , d'un métal (24) et de titane (22). Le matériau composite est poli dans une machine à polir comprenant un tampon de polissage (2), ceci à l'aide d'une bouillie aqueuse (9) qui comprend des particules abrasives submicroniques, un iodate et un peroxyde (10). Cette invention concerne également un autre procédé dans lequel on ajoute du peroxyde (10) à la bouillie aqueuse (9) uniquement lorsque l'on doit polir une couche de titane (22) ou de nitrure de titane (23). Cette invention peut également faire appel à l'addition d'une base (11) au flux de bouillie qui sort de la machine à polir, ceci de manière à amener le pH de la bouillie utilisée à environ 7 ou plus.
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Designated States: CN, JP, KR, SG
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
JP2002511192