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Machine translation
1. (WO1998053125) SINGLE CRYSTAL SILICON CARBIDE AND PROCESS FOR PREPARING THE SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1998/053125    International Application No.:    PCT/JP1998/002197
Publication Date: 26.11.1998 International Filing Date: 20.05.1998
IPC:
C30B 1/00 (2006.01), C30B 25/02 (2006.01), C30B 33/00 (2006.01)
Applicants: NIPPON PILLAR PACKING CO., LTD. [JP/JP]; 11-48, Nonakaminami 2-chome Yodogawa-ku Osaka-shi Osaka 532-0022 (JP) (For All Designated States Except US).
TANINO, Kichiya [JP/JP]; (JP) (For US Only)
Inventors: TANINO, Kichiya; (JP)
Agent: SUZUYE, Koichi; Osaka Fukokuseimei Building Room 607 2-4, Komatsubaracho Kita-ku, Osaka-shi Osaka 530-0018 (JP)
Priority Data:
9/170902 23.05.1997 JP
Title (EN) SINGLE CRYSTAL SILICON CARBIDE AND PROCESS FOR PREPARING THE SAME
(FR) CARBURE DE SILICIUM MONOCRYSTALLIN ET SON PROCEDE DE PREPARATION
Abstract: front page image
(EN)A composite (M) comprising an $g(a)-SiC single crystal substrate (1) and a $g(b)-SiC polycrystal plate (2) formed on the surface of the substrate (1) by thermal CVD is heat-treated at a temperature as high as 1900 to 2400 °C to transform the polycrystal of the polycrystal plate (2) to a single crystal which is aligned in the same orientation as the crystal axis of the single crystal substrate (1) and integrated with the single crystal of the single crystal substrate (1) to grow the single crystal into a large size, thus enabling a good single crystal SiC suffering from only very small lattice defect and micropipe defect to be efficiently prepared while ensuring a large area.
(FR)Un composite (M) comprenant un substrat (1) à monocrystal $g(a)-SiC et une plaque (2) de polycrystal $g(b)-SiC formée sur la surface de substrat (1) par procédé CVD thermique et traité à chaud à une température allant jusqu'à 1900 à 2400 °C pour transformer le polycrystal de la plaque (2) de polycrystal en un monocrystal, lequel est aligné dans la même direction que l'axe du crystal du substrat (1) à monocrystal et est intégré au monocrystal du substrat (1) à monocrystal pour le tirage du monocrystal en un gros crystal, permettant ainsi de préparer efficacement un bon SiC monocristallin ne présentant que de très petits défauts du réseau crystallin et de microtubes tout en assurant une grande surface.
Designated States: RU, US.
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)