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1. (WO1998053125) SINGLE CRYSTAL SILICON CARBIDE AND PROCESS FOR PREPARING THE SAME

Pub. No.:    WO/1998/053125    International Application No.:    PCT/JP1998/002197
Publication Date: Fri Nov 27 00:59:59 CET 1998 International Filing Date: Thu May 21 01:59:59 CEST 1998
IPC: C30B 1/00
C30B 25/02
C30B 33/00
Applicants: NIPPON PILLAR PACKING CO., LTD.

TANINO, Kichiya

Inventors: TANINO, Kichiya

Title: SINGLE CRYSTAL SILICON CARBIDE AND PROCESS FOR PREPARING THE SAME
Abstract:
A composite (M) comprising an α-SiC single crystal substrate (1) and a β-SiC polycrystal plate (2) formed on the surface of the substrate (1) by thermal CVD is heat-treated at a temperature as high as 1900 to 2400 °C to transform the polycrystal of the polycrystal plate (2) to a single crystal which is aligned in the same orientation as the crystal axis of the single crystal substrate (1) and integrated with the single crystal of the single crystal substrate (1) to grow the single crystal into a large size, thus enabling a good single crystal SiC suffering from only very small lattice defect and micropipe defect to be efficiently prepared while ensuring a large area.