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1. (WO1998053123) EPITAXY BOAT AND METHOD FOR LIQUID PHASE EPITAXIAL DEPOSIT OF CDHGTE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1998/053123 International Application No.: PCT/FR1998/001013
Publication Date: 26.11.1998 International Filing Date: 20.05.1998
Chapter 2 Demand Filed: 10.11.1998
IPC:
C30B 19/04 (2006.01) ,C30B 19/06 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
19
Liquid-phase epitaxial-layer growth
02
using molten solvents, e.g. flux
04
the solvent being a component of the crystal composition
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
19
Liquid-phase epitaxial-layer growth
06
Reaction chambers; Boats for supporting the melt; Substrate holders
Applicants:
COMMISSARIAT A L'ENERGIE ATOMIQUE [FR/FR]; 31-33, rue de la Fédération F-75015 Paris, FR (AllExceptUS)
PELLICIARI, Bernard [FR/FR]; FR (UsOnly)
POLGE, Bernard [FR/FR]; FR (UsOnly)
Inventors:
PELLICIARI, Bernard; FR
POLGE, Bernard; FR
Agent:
BREVATOME; 25, rue de Ponthieu F-75008 Paris, FR
Priority Data:
97/0617521.05.1997FR
Title (EN) EPITAXY BOAT AND METHOD FOR LIQUID PHASE EPITAXIAL DEPOSIT OF CDHGTE
(FR) NACELLE D'EPITAXIE ET PROCEDE POUR DEPOT D'UNE COUCHE DE CdHgTe PAR EPITAXIE EN PHASE LIQUIDE
Abstract:
(EN) The invention concerns an epitaxy boat for the liquid phase epitaxial deposit of a CdHgTe layer on a heterosubstrate without any risk of dissolving the heterosubstrate in the epitaxy solution. Said boat comprises two horizontal slides mutually offset such that the tellurium solution is brought above a selected zone of the heterosubstrate. The invention also concerns a method for depositing a CdHgTe layer on a heterosubstrate using said boat. The invention is applicable to the production of infrared radiation detectors.
(FR) L'invention concerne une nacelle d'épitaxie qui permet de déposer une couche de CdHgTe par épitaxie en phase liquide sur un hétérosubstrat sans risque de dissolution de l'hétérosubstrat dans la solution d'épitaxie. Cette nacelle comporte deux tiroirs horizontaux qui sont déplacés l'un par rapport à l'autre de façon à amener la solution de tellure au-dessus d'une zone choisie de l'hétérosubstrat. L'invention concerne aussi un procédé de dépôt d'une couche de CdHgTe sur un hétérosubstrat, utilisant cette nacelle. Application à la réalisation de détecteurs de rayonnements infrarouges.
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Designated States: JP, US
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
Publication Language: French (FR)
Filing Language: French (FR)
Also published as:
EP0983395