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1. (WO1998053117) APPARATUS AND METHOD FOR SPUTTER DEPOSITING DIELECTRIC FILMS ON A SUBSTRATE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1998/053117 International Application No.: PCT/US1998/010516
Publication Date: 26.11.1998 International Filing Date: 21.05.1998
Chapter 2 Demand Filed: 18.12.1998
IPC:
C23C 14/34 (2006.01) ,C23C 14/56 (2006.01) ,H01J 37/34 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
34
Sputtering
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
56
Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
J
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37
Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32
Gas-filled discharge tubes
34
operating with cathodic sputtering
Applicants:
TOKYO ELECTRON LIMITED [JP/JP]; TBS Broadcast Center 3-6 Akasaka 5-chome Minato-ku Tokyo 105, JP
Inventors:
LANTSMAN, Alexander, D.; US
Agent:
SUMME, Kurt, A. ; Wood, Herron & Evans, L.L.P. 2700 Carew Tower Cincinnati, OH 45202, US
Priority Data:
08/861,64922.05.1997US
Title (EN) APPARATUS AND METHOD FOR SPUTTER DEPOSITING DIELECTRIC FILMS ON A SUBSTRATE
(FR) APPAREIL ET PROCEDE DE DEPOT PAR PULVERISATION CATHODIQUE DE FILMS DIELECTRIQUES SUR UN SUBSTRAT
Abstract:
(EN) Apparatus and method for sputter depositing a layer of material comprises a sputtering chamber (10) having an internal conductive wall (12) which provides an electrical reference for plasma during sputter deposition. A conductive shield (32) positioned in the processing space (14) of the chamber (10) between the target (20) and the substrate (24) is configured for capturing sputtered material which would deposit on the chamber wall surface (12) during sputter deposition. The conductive shield (32) reduces the amount of sputtered material (40) depositing on the chamber wall (12) and maintains a surface portion of the wall (12) as a generally stable electrical reference for the plasma and is further operable for passing plasma therethrough during deposition to contact the stable electrical reference.
(FR) L'invention concerne un appareil et un procédé de dépôt par pulvérisation cathodique d'une couche de matériau, lequel appareil comprend une chambre de pulvérisation (10) pourvue d'une paroi (12) intérieure conductrice qui sert de référence électrique pour le plasma lors du dépôt par pulvérisation cathodique. Un blindage (32) conducteur disposé dans l'espace de traitement (14) de la chambre (10) entre la cible (20) et le substrat (24) est configuré de manière à piéger le matériau pulvérisé qui se déposerait sur la surface (12) de la paroi de la chambre lors du dépôt par pulvérisation. Le blindage (32) conducteur réduit la quantité de dépôt de matériau pulvérisé (40) sur la paroi (12) de la chambre et garde une partie superficielle de la paroi (12) comme référence électrique généralement stable pour le plasma. En outre, cet écran sert à laisser passer le plasma lors du dépôt de manière que le plasma vienne au contact de la référence électrique stable.
front page image
Designated States: AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, CA, CH, CN, CU, CZ, DE, DK, EE, ES, FI, GB, GE, GH, GM, GW, HU, ID, IL, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MD, MG, MK, MN, MW, MX, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, UA, UG, UZ, VN, YU, ZW
African Regional Intellectual Property Organization (ARIPO) (GH, GM, KE, LS, MW, SD, SZ, UG, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
KR1020010012858JP2001526736 AU1998075918