Search International and National Patent Collections
Some content of this application is unavailable at the moment.
If this situation persists, please contact us atFeedback&Contact
1. (WO1998052257) IMPROVED LASER CUTTING APPARATUS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1998/052257 International Application No.: PCT/US1998/009594
Publication Date: 19.11.1998 International Filing Date: 12.05.1998
Chapter 2 Demand Filed: 11.12.1998
IPC:
B23K 26/06 (2006.01) ,B23K 26/16 (2006.01) ,H01L 21/304 (2006.01) ,H01S 3/11 (2006.01) ,H01S 3/115 (2006.01) ,H01S 3/127 (2006.01)
B PERFORMING OPERATIONS; TRANSPORTING
23
MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
K
SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
26
Working by laser beam, e.g. welding, cutting, boring
02
Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
06
Shaping the laser beam, e.g. by masks or multi-focusing
B PERFORMING OPERATIONS; TRANSPORTING
23
MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
K
SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
26
Working by laser beam, e.g. welding, cutting, boring
16
Removing of by-products, e.g. particles or vapours produced during treatment of a workpiece
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
3
Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
10
Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
11
in which the quality factor of the optical resonator is rapidly changed, i.e. giant-pulse technique
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
3
Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
10
Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
11
in which the quality factor of the optical resonator is rapidly changed, i.e. giant-pulse technique
115
using an electro-optical device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
3
Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
10
Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
11
in which the quality factor of the optical resonator is rapidly changed, i.e. giant-pulse technique
127
Plural Q-switches
Applicants:
DAHM, Jonathan, S. [US/US]; US
Inventors:
DAHM, Jonathan, S.; US
Agent:
ABRAHAM, David, J.; Wilson Sonsini Goodrich & Rosati 650 Page Mill Road Palo Alto, CA 94304-1050, US
Priority Data:
08/854,81312.05.1997US
08/854,81412.05.1997US
Title (EN) IMPROVED LASER CUTTING APPARATUS
(FR) DISPOSITIF DE DECOUPE PAR LASER AMELIORE
Abstract:
(EN) Disclosed are lasers and laser systems including a resonator cavity (10) including an optical path; a gain medium (16) positioned in the resonator cavity (10) along the optical path; an electro-optic device (18) positioned in the resonator along the optical path; a polarizer (20) positioned in the resonator cavity along the optical path; a pump source (22) generating a pump beam incident on the gain medium (16) to produce an intercavity beam that is incident on the surface of the polarizer to produce a polarized output beam, wherein the polarized output beam has an average power of at least 40 W; and a high voltage pulser (24) coupled to the electro-optic device (18) and generating a voltage pulse to the electro-optic device (18), wherein the polarized output beam has a pulsewidth which does not exceed 1.5 nanoseconds with a pulse repetition frequency of at least 100 kHz.
(FR) L'invention concerne des lasers et des systèmes à laser qui comprennent une cavité résonante (10) comportant un chemin optique; un milieu de gain (16) positionné dans ladite cavité (10) le long du chemin optique; un dispositif piézo-électrique (18) positionné dans le résonateur le long du chemin optique; un polariseur (20) positionné dans la cavité le long du chemin optique; une source de pompage (22), qui génère un faisceau de pompage tombant sur le milieu de gain (16) et produisant ainsi un faisceau intercavités, qui tombe sur la surface du polariseur et produit ainsi un faisceau de sortie polarisé ayant une puissance moyenne d'au moins 40 W; et un générateur d'impulsions (24) haute tension, couplé au dispositif électro-optique (18), qui génère une impulsion de tension et la transmet au dispositif électro-optique (18). Le faisceau de sortie polarisé a une durée d'impulsion inférieure ou égale à 1,5 nanoseconde et une fréquence de répétition des impulsions supérieure ou égale à 100 kHz.
front page image
Designated States: AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, CA, CH, CN, CU, CZ, DE, DK, EE, ES, FI, GB, GE, GH, GM, GW, HU, ID, IL, IS, JP, KE, KG, KP, KR, KZ, LK, LR, LS, LT, LU, LV, MD, MG, MK, MN, MW, MX, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, UA, UG, US, UZ, VN, YU, ZW
African Regional Intellectual Property Organization (ARIPO) (GH, GM, KE, LS, MW, SD, SZ, UG, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
AU1998073793