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1. (WO1998052255) HIGH FREQUENCY SEMICONDUCTOR LASER MODULE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1998/052255 International Application No.: PCT/DE1998/000823
Publication Date: 19.11.1998 International Filing Date: 21.03.1998
Chapter 2 Demand Filed: 13.10.1998
IPC:
H01S 5/02 (2006.01) ,H01S 5/022 (2006.01) ,H01S 5/042 (2006.01) ,H01S 5/062 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
02
Structural details or components not essential to laser action
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
02
Structural details or components not essential to laser action
022
Mountings; Housings
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
04
Processes or apparatus for excitation, e.g. pumping
042
Electrical excitation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
06
Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
062
by varying the potential of the electrodes
Applicants:
ROBERT BOSCH GMBH [DE/DE]; Postfach 30 02 20 D-70442 Stuttgart, DE (AllExceptUS)
HAUER, Heiner [DE/DE]; DE (UsOnly)
KUKE, Albrecht [DE/DE]; DE (UsOnly)
MOESS, Eberhard [DE/DE]; DE (UsOnly)
Inventors:
HAUER, Heiner; DE
KUKE, Albrecht; DE
MOESS, Eberhard; DE
Priority Data:
197 19 853.812.05.1997DE
Title (DE) HOCHFREQUENZ-HALBLEITERLASERMODUL
(EN) HIGH FREQUENCY SEMICONDUCTOR LASER MODULE
(FR) MODULE DE LASER A SEMICONDUCTEUR HAUTE FREQUENCE
Abstract:
(DE) Die Erfindung betrifft ein Hochfrequenz-Halbleiterlasermodul, mit einem Silizium-Substrat, insbesondere aus einem niederohmigen Silizium, einer auf dieser angeordneten Laserdiode und wenigstens zwei Leitungen zur HF-Zufuhr, von denen eine durch eine Dielektrikumschicht vom Silizium-Substrat isoliert ist. Erfindungsgemäß ist die Laserdiode über eine metallische Montageschicht auf dem Silizium-Substrat angebracht, und die HF-Leitung bis in die Nähe der Laserdiode auf der Dielektrikumschicht verlegt.
(EN) Disclosed is a high frequency semiconductor laser module with a silicone substrate, especially a low resistance siliconized substrate, a laser diode mounted thereon and at least two H-F feeds, one of which is insulated from said siliconized substrate by a dielectric layer. According to the invention, the laser diode is laid on the siliconized substrate by means of a metallic assembly layer, and the H-F layer is moved away so as to be in the vincinity of the laser diode on the dielectric layer.
(FR) La présente invention concerne un module de laser à semiconducteur haute fréquence, ayant un substrat au silicium, notamment un silicium faiblement résistant, une diode-laser montée sur ledit substrat et au moins deux lignes d'alimentation haute fréquence, dont l'une est isolée du substrat au silicium par une couche diélectrique. Selon l'invention, la diode-laser est placée sur le substrat au silicium par l'intermédiaire d'une couche de montage métallique, et la ligne haute fréquence est déplacée jusqu'à proximité de la diode-laser sur la couche diélectrique.
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Designated States: US
European Patent Office (AT, BE, CH, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
Publication Language: German (DE)
Filing Language: German (DE)
Also published as:
EP0981842US6456641