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1. (WO1998052234) METHOD OF DOPING SILICON, METAL DOPED SILICON, METHOD OF MAKING SOLAR CELLS, AND SOLAR CELLS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1998/052234    International Application No.:    PCT/US1998/009596
Publication Date: 19.11.1998 International Filing Date: 12.05.1998
Chapter 2 Demand Filed:    11.12.1998    
IPC:
H01L 21/20 (2006.01), H01L 31/0288 (2006.01), H01L 31/18 (2006.01), H01L 31/20 (2006.01)
Applicants: THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ARKANSAS [US/US]; 2404 N. University Avenue, Little Rock, AR 72207 (US)
Inventors: NASEEN, Hameed, A.; (US).
HAQUE, M., Shahidul; (US).
BROWN, William, D.; (US)
Agent: GILBRETH, J., M.; P.O. Box 61305, Houston, TX 77208-1305 (US)
Priority Data:
08/855,229 13.05.1997 US
Title (EN) METHOD OF DOPING SILICON, METAL DOPED SILICON, METHOD OF MAKING SOLAR CELLS, AND SOLAR CELLS
(FR) PROCEDE DE DOPAGE DU SILICIUM, SILICIUM DOPE PAR UN METAL, PROCEDE DE FABRICATION DE CELLULES PHOTOVOLTAIQUES ET CELLULES PHOTOVOLTAIQUES
Abstract: front page image
(EN)A low temperature process for forming a metal doped silicon layer in which an amorphous silicon layer is deposited onto a substrate at low temperatures, with a metal layer then deposited upon the silicon layer. This structure is then annealed at low temperatures (in the range of 170 °C to 600 °C) to form a metal doped polycrystalline silicon having greater than about 1 x 1020 dopant atoms per cm3 of silicon.
(FR)Procédé basse température permettant de former une couche de silicium dopée par un métal. Selon le procédé, on dépose une couche de silicium amorphe sur un substrat à basse température; on dépose une couche métallique sur la couche de silicium; et on recuit cette structure à une température basse (comprise entre 170 et 600°C), de façon à former un silicium polycristallin dopé par un métal, qui renferme plus de 1 x 1020 atomes dopants par cm3 de silicium.
Designated States: AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, CA, CH, CN, CU, CZ, DE, DK, EE, ES, FI, GB, GE, GH, GM, GW, HU, ID, IL, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MD, MG, MK, MN, MW, MX, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, UA, UG, UZ, VN, YU, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, SD, SZ, UG, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)