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1. (WO1998052234) METHOD OF DOPING SILICON, METAL DOPED SILICON, METHOD OF MAKING SOLAR CELLS, AND SOLAR CELLS

Pub. No.:    WO/1998/052234    International Application No.:    PCT/US1998/009596
Publication Date: Fri Nov 20 00:59:59 CET 1998 International Filing Date: Wed May 13 01:59:59 CEST 1998
IPC: H01L 21/20
H01L 31/0288
H01L 31/18
H01L 31/20
Applicants: THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ARKANSAS
Inventors: NASEEN, Hameed, A.
HAQUE, M., Shahidul
BROWN, William, D.
Title: METHOD OF DOPING SILICON, METAL DOPED SILICON, METHOD OF MAKING SOLAR CELLS, AND SOLAR CELLS
Abstract:
A low temperature process for forming a metal doped silicon layer in which an amorphous silicon layer is deposited onto a substrate at low temperatures, with a metal layer then deposited upon the silicon layer. This structure is then annealed at low temperatures (in the range of 170 °C to 600 °C) to form a metal doped polycrystalline silicon having greater than about 1 x 1020 dopant atoms per cm3 of silicon.