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1. (WO1998052232) A PN-DIODE OF SiC AND A METHOD FOR PRODUCTION THEREOF
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1998/052232 International Application No.: PCT/SE1998/000239
Publication Date: 19.11.1998 International Filing Date: 12.02.1998
Chapter 2 Demand Filed: 11.11.1998
IPC:
H01L 21/04 (2006.01) ,H01L 29/24 (2006.01) ,H01L 29/861 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
12
characterised by the materials of which they are formed
24
including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20 or H01L29/22246
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
86
controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861
Diodes
Applicants:
ABB RESEARCH LTD. [CH/CH]; P.O. Box 8131 CH-8030 Zürich, CH (AllExceptUS)
ROTTNER, Kurt [DE/SE]; SE (UsOnly)
SCHÖNER, Adolf [DE/SE]; SE (UsOnly)
BAKOWSKI, Mietek [SE/SE]; SE (UsOnly)
Inventors:
ROTTNER, Kurt; SE
SCHÖNER, Adolf; SE
BAKOWSKI, Mietek; SE
Agent:
BJERKÉN, Håkan ; Bjerkéns Patentbyrå KB P.O. Box 1274 S-801 37 Gävle, SE
Priority Data:
9701724-809.05.1997SE
Title (EN) A PN-DIODE OF SiC AND A METHOD FOR PRODUCTION THEREOF
(FR) DIODE A JONCTION PNPN, EN SiC, ET SON PROCEDE DE PRODUCTION
Abstract:
(EN) A pn-diode of SiC has a first emitter layer part (9, 11) doped with first dopants having a low ionisation energy and a second part (7) designed as a grid and having portions (7) extending vertically from above and past the junction between the drift layer and the first part and being laterally separated from each other by drift layer regions for forming a pn-junction by said first part and the drift layer adjacent such portions at a vertical distance from a lower end (16) of said grid portions. The different parameters of the device are selected to allow a depletion of the drift layer in the blocking state form a continuous depleted region between the grid portions (7) and thereby screening off the high electric field at said pn-junction, which by this will not be exposed to high electrical fields.
(FR) Une diode à jonction PNPN présente une première partie formant couche émettrice (9, 11), dopée à l'aide de premiers dopants ayant une faible force d'ionisation et une deuxième partie (7) conçue comme une grille et présentant des portions (7) s'étendant verticalement depuis le dessus et au-delà de la jonction entre la couche de migration et la première partie et séparées les unes des autres par des couches de migration de sorte qu'une jonction PNPN soit formée par ladite première partie et la couche de migration adjacente auxdites portions, à une certaine distance dans le sens vertical d'une extrémité inférieure (16) desdites portions de grille. Les différents paramètres du dispositif sont sélectionnés de sorte qu'une déplétion de la couche de migration à l'état bloqué forme une couche appauvrie entre les parties (7) de la grille et fasse écran au champ électrique puissant présent au niveau de la jonction PNPN, ce qui empêche l'exposition de celle-ci à des champs électriques puissants.
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Designated States: JP, US
European Patent Office (AT, BE, CH, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP0980589JP2001525990