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1. (WO1998052227) DIELECTRIC THIN FILM ELEMENT AND METHOD FOR MANUFACTURING THE SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/1998/052227 International Application No.: PCT/JP1997/001601
Publication Date: 19.11.1998 International Filing Date: 13.05.1997
IPC:
H01L 37/02 (2006.01) ,H01L 41/316 (2013.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
37
Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using Nernst-Ettinghausen effect; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
02
using thermal change of dielectric constant, e.g. working above and below the Curie point
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22
Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
31
Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base
314
by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing
316
by vapour phase deposition
Applicants:
MAEDA, Chisako [JP/JP]; JP (UsOnly)
YAMADA, Akira [JP/JP]; JP (UsOnly)
UMEMURA, Toshio [JP/JP]; JP (UsOnly)
UCHIKAWA, Fusaoki [JP/JP]; JP (UsOnly)
MITSUBISHI DENKI KABUSHIKI KAISHA [JP/JP]; 2-3, Marunouchi 2-chome Chiyoda-ku Tokyo 100, JP (AllExceptUS)
Inventors:
MAEDA, Chisako; JP
YAMADA, Akira; JP
UMEMURA, Toshio; JP
UCHIKAWA, Fusaoki; JP
Agent:
AOYAMA, Tamotsu ; Aoyama & Partners IMP Building 3-7, Shiromi 1-chome Chuo-ku, Osaka-shi Osaka 540, JP
Priority Data:
Title (EN) DIELECTRIC THIN FILM ELEMENT AND METHOD FOR MANUFACTURING THE SAME
(FR) ELEMENT A COUCHE MINCE DIELECTRIQUE ET SON PROCEDE DE FABRICATION
Abstract:
(EN) At the time of manufacturing a plurality of dielectric thin film elements by successively forming a base layer and a dielectric thin film on a substrate and dividing the thin film into a plurality of blocks each having a prescribed shape and, as necessary, forming an upper structre on the thin film in each divided block, the thin film is divided into island-like blocks on the base layer by using a mask after the base layer is formed so that the base layer can have a stress in the direction opposite to the internal stress of the dielectric thin film or the thin film is divided into the island-like blocks after the thin film is formed.
(FR) Lors de la fabrication d'une pluralité d'éléments à couche mince diélectrique par formation successive d'une couche de base et d'une couche mince diélectrique sur un substrat et division de cette couche mince en une pluralité de blocs présentant chacun une forme spécifiée et, le cas échéant, formation d'une structure supérieure sur la couche mince dans chaque bloc divisé, la couche mince est divisée en blocs analogues à des îlots sur la couche de base à l'aide d'un masque après formation de cette couche de base afin que celle-ci puisse présenter une contrainte dans le sens opposé à la contrainte interne de la couche mince diélectrique, ou bien la couche mince est divisée, après sa formation, en blocs analogues à des îlots.
Designated States: AU, JP, US
European Patent Office (EPO) (AT, BE, CH, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)