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1. (WO1998052211) INTEGRATED CMOS CIRCUIT CONFIGURATION, AND PRODUCTION OF SAME

Pub. No.:    WO/1998/052211    International Application No.:    PCT/DE1998/001154
Publication Date: Fri Nov 20 00:59:59 CET 1998 International Filing Date: Sat Apr 25 01:59:59 CEST 1998
IPC: H01L 27/092
Applicants: SIEMENS AKTIENGESELLSCHAFT
KRAUTSCHNEIDER, Wolfgang
HOFMANN, Franz
RISCH, Lothar
Inventors: KRAUTSCHNEIDER, Wolfgang
HOFMANN, Franz
RISCH, Lothar
Title: INTEGRATED CMOS CIRCUIT CONFIGURATION, AND PRODUCTION OF SAME
Abstract:
The present invention pertains to a CMOS circuit configuration comprising a first MOS transistor and a second MOS transistor complementary to the first one, one MOS transistor being placed at the bottom of a low and the other on the main surface of a semiconductor substrate. The MOS transistors are arranged relative to each other in such a way that a current flow passes through the MOS transistors in a direction substantially parallel to a sidewall of the low, said sidewall being located between the MOS transistors.