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1. (WO1998052101) GRAY SCALE MASK AND DEPTH PATTERN TRANSFER TECHNIQUE USING INORGANIC CHALCOGENIDE GLASS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1998/052101 International Application No.: PCT/US1998/009373
Publication Date: 19.11.1998 International Filing Date: 15.05.1998
IPC:
B81B 1/00 (2006.01) ,B81C 1/00 (2006.01) ,G03F 1/00 (2012.01) ,G03F 1/54 (2012.01) ,G03F 7/00 (2006.01) ,G03F 7/004 (2006.01)
B PERFORMING OPERATIONS; TRANSPORTING
81
MICRO-STRUCTURAL TECHNOLOGY
B
MICRO-STRUCTURAL DEVICES OR SYSTEMS, e.g. MICRO-MECHANICAL DEVICES
1
Devices without movable or flexible elements, e.g. micro-capillary devices
B PERFORMING OPERATIONS; TRANSPORTING
81
MICRO-STRUCTURAL TECHNOLOGY
C
PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICRO-STRUCTURAL DEVICES OR SYSTEMS
1
Manufacture or treatment of devices or systems in or on a substrate
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1
Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1
Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
54
Absorbers, e.g. opaque materials
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
04
Chromates
Applicants:
AERIAL IMAGING CORPORATION [US/US]; Suite B 2681 Zanker Road San Jose, CA 95134, US (AllExceptUS)
BLOCK, Barry [US/US]; US (UsOnly)
THORNTON, Arnold, O. [US/US]; US (UsOnly)
INGVERSEN, Jan [DE/US]; US (UsOnly)
DASCHNER, Walter [DE/US]; US (UsOnly)
Inventors:
BLOCK, Barry; US
THORNTON, Arnold, O.; US
INGVERSEN, Jan; US
DASCHNER, Walter; US
Agent:
LEEDS, Kenneth, E. ; Skjerven, Morrill, MacPherson, Franklin & Friel LLP Suite 700 25 Metro Drive San Jose, CA 95110, US
Priority Data:
08/857,32416.05.1997US
Title (EN) GRAY SCALE MASK AND DEPTH PATTERN TRANSFER TECHNIQUE USING INORGANIC CHALCOGENIDE GLASS
(FR) TECHNIQUE DE TRANSFERT DE MASQUE D'ECHELLE DE GRIS ET DE MOTIF DE PROFONDEUR UTILISANT UN VERRE DE CHALCOGENURE INORGANIQUE
Abstract:
(EN) A method of producing a high resolution expanded analog gray scale mask is described. Using an inorganic chalcogenide glass, such as a selenium germanium, coated with a thin layer of silver, a gray scale mask may be produced with accurate control of the size, uniformity and variance of the pixels. The selenium germanium glass is composed of column structures arranged perpendicularly to the substrate giving a possible edge precision of 100 Å. The column structures also prevent undercutting during the etching process, thus permitting pixels to be placed close together. Accordingly, selenium germanium may be used as a high resolution gray scale mask with an expanded analog gray scale. The gray scale mask may be used to impress information as a modulated thickness on a selenium germanium photoresist layer on an inorganic substrate. The selenium germanium photoresist layer may then transfer the gray scale to the substrate.
(FR) La présente invention se rapporte à un procédé de production d'un masque haute résolution d'échelle de gris dilatée analogique. En utilisant un verre de chalcogénure inorganique, tel que du germanium de sélénium, revêtu d'une fine couche d'argent, on peut produire un masque d'échelle de gris avec une commande précise de la taille, de l'uniformité et de la variance des pixels. Le verre de germanium de sélénium est composé de structures en colonnes disposées perpendiculairement au substrat permettant d'obtenir une précision de bord de 100 Å. Les structures en colonnes empêchent également les attaques latérales pendant le procédé d'attaque, ce qui permet de placer les pixels de façon rapprochée. Par conséquent, le germanium de sélénium peut être utilisé comme un masque d'échelle de gris haute résolution avec une échelle de gris analogique dilatée. Le masque d'échelle de gris peut aussi être utilisé pour imprimer des informations grâce à la modulation de l'épaisseur, sur une couche photorésist de germanium de sélénium sur un substrat inorganique. La couche photorésist de germanium de sélénium peut transférer ensuite l'échelle de gris vers le substrat.
Designated States: JP, US
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP0914629JP2000514933