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1. (WO1998051838) LOW RESISTIVITY W USING B¿2?H¿6?
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/1998/051838 International Application No.: PCT/US1998/010078
Publication Date: 19.11.1998 International Filing Date: 15.05.1998
Chapter 2 Demand Filed: 14.12.1998
IPC:
C23C 16/02 (2006.01) ,C23C 16/14 (2006.01) ,H01L 21/285 (2006.01) ,H01L 21/768 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
02
Pretreatment of the material to be coated
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
06
characterised by the deposition of metallic material
08
from metal halides
14
Deposition of only one other metal element
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
283
Deposition of conductive or insulating materials for electrodes
285
from a gas or vapour, e.g. condensation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
768
Applying interconnections to be used for carrying current between separate components within a device
Applicants:
RAJAGOPALAN, Ravi [IN/US]; US (UsOnly)
GHANAYEM, Steve [US/US]; US (UsOnly)
YAMAZAKI, Manabu [JP/JP]; JP (UsOnly)
OHTSUKA, Keiichi [JP/JP]; JP (UsOnly)
MAEDA, Yuji [JP/JP]; JP (UsOnly)
APPLIED MATERIALS, INC. [US/US]; P.O. Box 450A Santa Clara, CA 95052, US (AllExceptUS)
Inventors:
RAJAGOPALAN, Ravi; US
GHANAYEM, Steve; US
YAMAZAKI, Manabu; JP
OHTSUKA, Keiichi; JP
MAEDA, Yuji; JP
Agent:
SHAFFER, William, L. ; Townsend and Townsend and Crew LLP 8th floor Two Embarcadero Center San Francisco, CA 94111-3834, US
Priority Data:
08/857,65816.05.1997US
Title (EN) LOW RESISTIVITY W USING B2H6
(FR) TUNGSTENE A FAIBLE RESISTIVITE UTILISANT B2H6
Abstract:
(EN) A multiple step chemical vapor deposition process for depositing a tungsten layer on a substrate (16). A first step of the depostion process includes a nucleation step in which WF6 and SiH4 are introduced into a deposition chamber (step 200). Next, the flow of WF6 and SiH4 are stopped and diborane is introduced into the chamber (12) for between 5-25 seconds (step 210). Finally, during a bulk deposition step, the WF6 is reintroduced into the chamber along with H2 and B2H6 flows to deposit a tungsten layer on the substrate (step 220). In a preferred embodiment, the bulk deposition step also introduces nitrogen into the process gas.
(FR) L'invention concerne un procédé de dépôt chimique en phase vapeur à plusieurs étapes, destiné à déposer une couche de tungstène sur un substrat (16). La première étape de ce procédé de métallisation consiste en une étape de nucléation, au cours de laquelle WF6 et SiH4 sont introduits dans une chambre de dépôt (étape 200). L'étape suivante consiste à arrêter l'écoulement de WF6 et de SiH4, puis à introduire du diborane dans cette chambre (12), pendant 5 à 25 secondes (étape 210). Enfin, au cours d'une dernière étape de dépôt en masse, on introduit à nouveau WF6 dans ladite chambre, conjointement à des écoulements de H2 et B2H6, afin de déposer une couche de tungstène sur le substrat (étape 220). Dans un mode de réalisation préféré, on introduit également de l'azote dans le gaz utilisé, au cours de ladite étape de dépôt en masse.
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Designated States: AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, CA, CH, CN, CU, CZ, DE, DK, EE, ES, FI, GB, GE, GH, GM, GW, HU, ID, IL, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MD, MG, MK, MN, MW, MX, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, UA, UG, US, UZ, VN, YU, ZW
African Regional Intellectual Property Organization (ARIPO) (GH, GM, KE, LS, MW, SD, SZ, UG, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)