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1. (WO1998051837) CHEMICAL VAPOUR DEPOSITION PRECURSORS
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/1998/051837 International Application No.: PCT/GB1998/001365
Publication Date: 19.11.1998 International Filing Date: 13.05.1998
Chapter 2 Demand Filed: 14.12.1998
IPC:
C07F 7/00 (2006.01) ,C23C 16/40 (2006.01)
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
F
ACYCLIC, CARBOCYCLIC, OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
7
Compounds containing elements of the 4th Group of the Periodic System
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22
characterised by the deposition of inorganic material, other than metallic material
30
Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40
Oxides
Applicants: JONES, Anthony, Copeland[GB/GB]; GB (UsOnly)
LEEDHAM, Timothy, John[GB/GB]; GB (UsOnly)
CROSBIE, Michael, John[GB/GB]; GB (UsOnly)
WILLIAMS, Dennis, John[GB/GB]; GB (UsOnly)
WRIGHT, Peter, John[GB/GB]; GB (UsOnly)
LANE, Penelope, Anne[GB/GB]; GB (UsOnly)
SECRETARY OF STATE FOR DEFENCE acting through HIS DEFENCE EVALUATION AND RESEARCH AGENCY[GB/GB]; St. Andrews Road Great Malvern Worcestershire WR14 3PS, GB (AllExceptUS)
Inventors: JONES, Anthony, Copeland; GB
LEEDHAM, Timothy, John; GB
CROSBIE, Michael, John; GB
WILLIAMS, Dennis, John; GB
WRIGHT, Peter, John; GB
LANE, Penelope, Anne; GB
Agent: ROYSTONS; Tower Building Water Street Merseyside Liverpool L3 1BA, GB
Priority Data:
9709639.014.05.1997GB
9725220.929.11.1997GB
Title (EN) CHEMICAL VAPOUR DEPOSITION PRECURSORS
(FR) PRECURSEURS UTILISES DANS LES TECHNIQUES DE DEPOT CHIMIQUE EN PHASE VAPEUR
Abstract:
(EN) Zirconium precursors for use in depositing thin films of or containing zirconium oxide using an MOCVD technique have the following general formula: Zrx(OR)yLz wherein R is an alkyl group; L is a $g(b)-diketonate group; x = 1 or 2; y = 2, 4 or 6; and z = 1 or 2.
(FR) Précurseurs de zirconium destinés à être utilisés dans le but d'obtenir le dépôt de films minces d'oxyde de zirconium, ou contenant de l'oxyde de zirconium, et ce, grâce à la technique du dépôt chimique métal-oxyde en phase vapeur. Ces précurseurs présentent la formule générale suivante Zrx(OR)yLz dans laquelle R représente un groupe alkyle; L, un groupe $g(b)-dicétonate; x = 1 ou 2; y = 2, 4 ou 6; et z = 1 ou 2.
Designated States: CA, CN, GB, JP, KR, US
European Patent Office (EPO) (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
Publication Language: English (EN)
Filing Language: English (EN)