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1. (WO1998050962) SOLAR BATTERY AND PROCESS FOR MANUFACTURING THE SAME
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1998/050962 International Application No.: PCT/JP1998/001994
Publication Date: 12.11.1998 International Filing Date: 30.04.1998
Chapter 2 Demand Filed: 30.04.1998
IPC:
H01L 31/032 (2006.01) ,H01L 31/0336 (2006.01) ,H01L 31/0392 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248
characterised by their semiconductor bodies
0256
characterised by the material
0264
Inorganic materials
032
including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272-H01L31/0312154
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248
characterised by their semiconductor bodies
0256
characterised by the material
0264
Inorganic materials
0328
including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272-H01L31/032174
0336
in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of the sixth group of the Periodic System
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248
characterised by their semiconductor bodies
036
characterised by their crystalline structure or particular orientation of the crystalline planes
0392
including thin films deposited on metallic or insulating substrates
Applicants:
ASAHI KASEI KOGYO KABUSHIKI KAISHA [JP/JP]; 2-6, Dojimahama 1-chome Kita-ku Osaka-shi Osaka 530-8205, JP (AL, AM, AT, AU, AZ, BA, BB, BE, BF, BG, BJ, BR, BY, CA, CF, CG, CH, CI, CM, CN, CU, CY, CZ, DE, DK, EE, ES, FI, FR, GA, GB, GE, GH, GM, GN, GR, GW, HU, ID, IE, IL, IS, IT, JP, KE, KG, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MC, MD, MG, MK, ML, MN, MR, MW, MX, NE, NL, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, SN, SZ, TD, TG, TJ, TM, TR, TT, UA, UG, UZ, VN, YU, ZW)
NAKAZAWA, Hidenobu [JP/JP]; JP (UsOnly)
WATANABE, Takayuki [JP/JP]; JP (UsOnly)
Inventors:
NAKAZAWA, Hidenobu; JP
WATANABE, Takayuki; JP
Agent:
MORI, Tetsuya ; Nichiei Kokusai Tokkyo Jimusho Muraki Building, 8th floor 7, Kanda-Kajicho 3-chome Chiyoda-ku Tokyo 101-0045, JP
Priority Data:
10/7234720.03.1998JP
9/11691807.05.1997JP
Title (EN) SOLAR BATTERY AND PROCESS FOR MANUFACTURING THE SAME
(FR) CELLULE SOLAIRE ET PROCEDE DE FABRICATION
Abstract:
(EN) A solar battery having a semiconductor layer of a chalcopyrite structure as a light absorption layer and a flexible film as a substrate and being prevented from causing breakdown and peel-off of the semiconductor layer of the chalcopyrite structure due to warping of the flexible film during heat treatment. To realize this, a poly(p-phenyleneterephthalamide) film having a coefficient of thermal expansion of 5.0 x 10-6/°C is used as a substrate (1). After a Ti-base reinforcing layer (6) is provided on the whole back surface of this substrate (1), a first electrode layer (2) is provided on the front surface of this substrate (1), and a p-type semiconductor layer (3) of a chalcopyrite structure is formed as a light absorption layer on the surface of the layer (2).
(FR) Cette invention concerne une cellule solaire, laquelle comprend une couche semi-conductrice qui consiste en une structure de chalcopyrite et qui joue le rôle de couche d'absorption de la lumière, ainsi qu'un film flexible servant de substrat. La déformation du film flexible lors d'un traitement thermique permet d'éviter tout risque de panne ou de pelage de la couche semi-conductrice consistant en une structure de chalcopyrite. A cette fin, on utilise en qualité de substrat (1) un film de poly(p-phénylèneterephtalamide) qui possède un coefficient de dilatation thermique de 5,0 x 10-6/°C. Après avoir disposé une couche de renfort (6) à base de Ti sur toute la surface arrière du substrat (1), une première couche d'électrode (2) est formée sur la surface avant dudit substrat (1). Une couche semi-conductrice de type p (3) consistant en une structure de chalcopyrite est enfin formée à la surface de la couche (2) et va jouer le rôle de couche d'absorption de la lumière.
front page image
Designated States: AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, CA, CH, CN, CU, CZ, DE, DK, EE, ES, FI, GB, GE, GH, GM, GW, HU, ID, IL, IS, JP, KE, KG, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MD, MG, MK, MN, MW, MX, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, UA, UG, US, UZ, VN, YU, ZW
African Regional Intellectual Property Organization (ARIPO) (GH, GM, KE, LS, MW, SD, SZ, UG, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
US6274805AU1998070833