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Machine translation
1. (WO1998050960) FLOATING GATE MEMORY CELL WITH CHARGE LEAKAGE PREVENTION
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1998/050960    International Application No.:    PCT/US1998/008709
Publication Date: 12.11.1998 International Filing Date: 30.04.1998
IPC:
H01L 21/8247 (2006.01), H01L 29/423 (2006.01)
Applicants: ATMEL CORPORATION [US/US]; 2325 Orchard Parkway San Jose, CA 95131 (US)
Inventors: LARSEN, Bradley, J.; (US).
WU, Tsung-Ching; (US)
Agent: SCHNECK, Thomas; Law Offices of Thomas Schneck P.O. Box 2-E San Jose, CA 95109-0005 (US)
Priority Data:
08/853,691 09.05.1997 US
Title (EN) FLOATING GATE MEMORY CELL WITH CHARGE LEAKAGE PREVENTION
(FR) CELLULE MEMOIRE A GRILLE FLOTTANTE PREVENANT LES FUITES DE CHARGES
Abstract: front page image
(EN)A process for fabricating a floating gate memory cell (60) with reduced charge leakage. An oxide regrowth (73) is formed over the sides of the floating gate (69) and is then covered with an oxide protective coating (64, 66). The structure is applicable to salicide and non-salicide memory cells and is especially useful in floating gate memory cells with gate stacks having abnormally shaped side walls.
(FR)L'invention porte sur un procédé de fabrication d'une cellule mémoire (60) à grille flottante à fuites de charges réduites. Une surépaisseur (73) d'oxyde est formée sur les côtés de la grille flottante (69) puis recouverte d'un revêtement protecteur de l'oxyde (64, 66). Cette structure peut s'appliquer aux cellules de mémoire à siliciure ou sans siliciure, et en particulier aux cellules mémoires à grille flottante dont les empilements de la grille présentent des parois latérales de forme anormale.
Designated States: CA, CN, JP, KR, NO, SG.
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE).
Publication Language: English (EN)
Filing Language: English (EN)