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Machine translation
1. (WO1998050950) SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1998/050950    International Application No.:    PCT/JP1997/001537
Publication Date: 12.11.1998 International Filing Date: 07.05.1997
Chapter 2 Demand Filed:    07.05.1997    
IPC:
H01L 23/498 (2006.01), H05K 3/34 (2006.01)
Applicants: HITACHI, LTD. [JP/JP]; 6, Kanda Surugadai 4-chome, Chiyoda-ku, Tokyo 101 (JP) (For All Designated States Except US).
HITACHI MICROCOMPUTER SYSTEM, LTD. [JP/JP]; 22-1, Josuihoncho 5-chome, Kodaira-shi, Tokyo 187 (JP) (For All Designated States Except US).
ICHITANI, Masahiro [JP/JP]; (JP) (For US Only).
HARUTA, Ryo [JP/JP]; (JP) (For US Only).
YAMAGUCHI, Toshihiro [JP/JP]; (JP) (For US Only).
KIMOTO, Ryosuke [JP/JP]; (JP) (For US Only).
SHIBAMOTO, Masanori [JP/JP]; (JP) (For US Only)
Inventors: ICHITANI, Masahiro; (JP).
HARUTA, Ryo; (JP).
YAMAGUCHI, Toshihiro; (JP).
KIMOTO, Ryosuke; (JP).
SHIBAMOTO, Masanori; (JP)
Agent: TSUTSUI, Yamato; Tsutsui & Associates, N.S. Excel 301, 22-45, Nishishinjuku 7-chome, Shinjuku-ku, Tokyo 160 (JP)
Priority Data:
Title (EN) SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
(FR) DISPOSITIF SEMI-CONDUCTEUR ET PRODUCTION DE CE DISPOSITIF
Abstract: front page image
(EN)Bump electrodes which are the outer connection terminals of a package are made of elastic material. The stress which is produced by the difference in thermal expansion coefficient between the package and a printed wiring board on which the package is mounted is absorbed by the elastic deformation of the bump electrodes. The preferable elasticity of the elastic material of which the bump electrodes are made is 0.00001 Gpa to 5 Gpa and, more preferably, 0.001 Gpa to 1 Gpa.
(FR)Les électrodes à bosses qui forment les bornes de connexion externes d'un boîtier, sont formées dans un matériau élastique. La tension résultant de la différence de coefficient de dilatation thermique entre le boîtier et une carte imprimée sur laquelle le boîtier est monté est absorbée par la déformation élastique des électrodes à bosses. Le matériau de fabrication de ces électrodes à bosses présente de préférence une élasticité comprise entre 0,00001 Gpa et 5 Gpa, et plus particulièrement une élasticité comprise entre 0,001 Gpa et 1 Gpa.
Designated States: CN, JP, KR, SG, US.
European Patent Office (AT, BE, CH, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)