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1. (WO1998050948) METHOD FOR ETCHING SILICON WAFER
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1998/050948 International Application No.: PCT/US1998/008936
Publication Date: 12.11.1998 International Filing Date: 01.05.1998
Chapter 2 Demand Filed: 27.10.1998
IPC:
H01L 21/306 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
Applicants:
MEMC ELECTRONIC MATERIALS, INC. [US/US]; 501 Pearl Drive P.O. Box 8 St. Peters, MO 63376, US
Inventors:
ERK, Henry; US
IWAMOTO, Yoshio; JP
SUZUKI, Yoshihiro; JP
KIYOTOSHI, Ikeda; JP
Agent:
HEJLEK, Edward, J. ; Senniger, Powers, Leavitt & Roedel 16th floor One Metropolitan Square St. Louis, MO 63102, US
Priority Data:
09/070,68030.04.1998US
9/11455602.05.1997JP
Title (EN) METHOD FOR ETCHING SILICON WAFER
(FR) PROCEDE D'ATTAQUE DE PLAQUETTE EN SILICIUM
Abstract:
(EN) A method for etching a silicon wafer includes the steps of: lapping a silicon wafer; etching the silicon wafer; and polishing the silicon wafer; wherein the etching step includes an etching treatment and a rinsing treatment, and at least an oxidizing agent is added to a rinse to be used for the rinsing treatment, thereby forming an oxidation film on a surface of the silicon wafer.
(FR) L'invention concerne un procédé d'attaque de plaquette en silicium, qui comprend les étapes suivantes: rodage d'une plaquette en silicium; attaque de ladite plaquette; et polissage de cette plaquette; la phase d'attaque comporte à la fois un traitement d'attaque et un traitement de rinçage, et au moins un oxydant est ajouté au liquide de rinçage pour le traitement de rinçage, ce qui entraîne la formation d'une pellicule d'oxydation à la surface de la plaquette en silicium.
Designated States: CN, JP, KR, SG
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
KR1020010012144SG68508EP0978140CN1254440