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1. (WO1998050606) VERTICAL FURNACE FOR THE TREATMENT OF SEMICONDUCTOR SUBSTRATES
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1998/050606 International Application No.: PCT/NL1998/000246
Publication Date: 12.11.1998 International Filing Date: 05.05.1998
IPC:
C23C 16/44 (2006.01) ,C30B 25/08 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02
Epitaxial-layer growth
08
Reaction chambers; Selection of materials therefor
Applicants:
ASM INTERNATIONAL N.V. [NL/NL]; Jan van Eycklaan 10 Postbus 100 NL-3720 AC Bilthoven, NL (AllExceptUS)
BUIJZE, Jacobus, Pieter [NL/NL]; NL (UsOnly)
STOUTJESDIJK, Jeroen, Jan [NL/NL]; NL (UsOnly)
DE RIDDER, Christianus, Gerardus, Maria [NL/NL]; NL (UsOnly)
STOHR, Hubertus, Johannes, Julius [NL/NL]; NL (UsOnly)
Inventors:
BUIJZE, Jacobus, Pieter; NL
STOUTJESDIJK, Jeroen, Jan; NL
DE RIDDER, Christianus, Gerardus, Maria; NL
STOHR, Hubertus, Johannes, Julius; NL
Agent:
DE BRUIJN, Leendert, C.; Nederlandsch Octrooibureau Scheveningseweg 82 P.O. Box 29720 NL-2502 LS The Hague, NL
Priority Data:
100596302.05.1997NL
Title (EN) VERTICAL FURNACE FOR THE TREATMENT OF SEMICONDUCTOR SUBSTRATES
(FR) FOUR VERTICAL POUR LE TRAITEMENT DE SUBSTRATS SEMICONDUCTEURS
Abstract:
(EN) The treatment chamber in the furnace is delimited by a liner of refractory material. In order to increase the life thereof and in particular to restrict the sensitivity to deposits deposited by the process gas fed through the furnace, it is proposed to make the liner of a silicon carbide material. To seal the furnace chamber, a second liner of quartz material is placed around a liner of this type and the gap between the two liners is flushed.
(FR) Cette invention se rapporte à un four vertical pour le traitement de substrats semiconducteurs, dont la chambre de traitement est délimitée par un garnissage intérieur en matériau réfractaire. Pour augmenter la durée de vie du four et en particulier pour restreindre sa senbilité aux dépôts se formant sous l'action du gaz utilisé dans la four, on propose de réaliser le garnissage intérieur en un matériau à base de carbure de silicium. Pour sceller la chambre du four, un second garnissage intérieur en matériau à quartz est placé autour d'un garnissage intérieur de ce type et l'espace libre entre les deux garnissages intérieurs est comblé.
front page image
Designated States: AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, CA, CH, CN, CU, CZ, DE, DK, EE, ES, FI, GB, GE, GH, GM, GW, HU, ID, IL, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MD, MG, MK, MN, MW, MX, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, UA, UG, US, UZ, VN, YU, ZW
African Regional Intellectual Property Organization (ARIPO) (GH, GM, KE, LS, MW, SD, SZ, UG, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
US6225602JP2000513878 AU1998074567