WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO1998050200) ABRASIVE AND METHOD FOR POLISHING SEMICONDUCTOR SUBSTRATE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1998/050200    International Application No.:    PCT/JP1998/002014
Publication Date: 12.11.1998 International Filing Date: 06.05.1998
IPC:
B24B 37/04 (2006.01), B24D 3/20 (2006.01), B24D 3/34 (2006.01), C09G 1/02 (2006.01), H01L 21/321 (2006.01)
Applicants: KABUSHIKI KAISHA TOSHIBA [JP/JP]; 72, Horikawa-cho Saiwai-ku Kawasaki-shi Kanagawa-ken 210-8572 (JP) (For All Designated States Except US).
TOKUYAMA CORPORATION [JP/JP]; 1-1, Mikage-cho Tokuyama-shi Yamaguchi-ken 745-8648 (JP) (For All Designated States Except US).
MIYASHITA, Naoto [JP/JP]; (JP) (For US Only).
MINAMI, Yoshihiro [JP/JP]; (JP) (For US Only).
DOI, Kenji [JP/JP]; (JP) (For US Only).
TAKAYASU, Jun [JP/JP]; (JP) (For US Only).
KOHNO, Hiroyuki [JP/JP]; (JP) (For US Only).
KATO, Hiroshi [JP/JP]; (JP) (For US Only).
HAYASHI, Kazuhiko [JP/JP]; (JP) (For US Only)
Inventors: MIYASHITA, Naoto; (JP).
MINAMI, Yoshihiro; (JP).
DOI, Kenji; (JP).
TAKAYASU, Jun; (JP).
KOHNO, Hiroyuki; (JP).
KATO, Hiroshi; (JP).
HAYASHI, Kazuhiko; (JP)
Agent: SUZUYE, Takehiko; Suzuye & Suzuye 7-2, Kasumigaseki 3-chome Chiyoda-ku Tokyo 100-0013 (JP)
Priority Data:
9/117045 07.05.1997 JP
Title (EN) ABRASIVE AND METHOD FOR POLISHING SEMICONDUCTOR SUBSTRATE
(FR) ABRASIF ET PROCEDE DE POLISSAGE DE SEMI-CONDUCTEURS
Abstract: front page image
(EN)Polishing with an abrasive comprising abrasive particles composed mainly of silica particles, water as a solvent, and water-soluble cellulose and having an alkali metal impurity content of not more than 5C ppm wherein C represents the concentration of the water-soluble cellulose in % by weight enables flattening of a semiconductor wafer without damage to a substrate and a film to be polished and without causing dishing and other unfavorable phenomena.
(FR)L'invention porte sur le polissage au moyen d'un abrasif, cet abrasif comprenant des particules abrasives constituées principalement de particules de silice, d'eau agissant comme solvant, et de cellulose soluble dans l'eau et ayant une teneur en impuretés de métaux alcalins inférieure à 5C ppm, C représentant la concentration de la cellulose soluble dans l'eau en % en poids. Ce procédé de polissage permet d'aplatir une tranche de semi-conducteur sans endommager le substrat et le film à polir, et sans provoquer de cambrure et autre phénomène indésirable.
Designated States: KR, US.
European Patent Office (DE, FR, GB).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)