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1. (WO1998049762) DEVICE FOR LIMITING ELECTRICAL ALTERNATING CURRENTS, ESPECIALLY DURING SHORT-CIRCUITS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1998/049762 International Application No.: PCT/DE1998/001029
Publication Date: 05.11.1998 International Filing Date: 09.04.1998
Chapter 2 Demand Filed: 13.11.1998
IPC:
H01L 29/24 (2006.01) ,H01L 29/808 (2006.01) ,H02H 9/02 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
12
characterised by the materials of which they are formed
24
including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20 or H01L29/22246
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
80
with field effect produced by a PN or other rectifying junction gate
808
with a PN junction gate
H ELECTRICITY
02
GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
H
EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
9
Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
02
responsive to excess current
Applicants:
SIEMENS AKTIENGESELLSCHAFT [DE/DE]; Wittelsbacherplatz 2 D-80333 München, DE (AT, BE, CH, CN, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, JP, LU, MC, NL, PT, SE)
MITLEHNER, Heinz [DE/DE]; DE (UsOnly)
STEPHANI, Dietrich [DE/DE]; DE (UsOnly)
BARTSCH, Wolfgang [DE/DE]; DE (UsOnly)
Inventors:
MITLEHNER, Heinz; DE
STEPHANI, Dietrich; DE
BARTSCH, Wolfgang; DE
Priority Data:
197 17 614.325.04.1997DE
197 26 678.924.06.1997DE
298 01 945.005.02.1998DE
Title (DE) VORRICHTUNG ZUM BEGRENZEN ELEKTRISCHER WECHSELSTRÖME, INSBESONDERE IM KURZSCHLUSSFALL
(EN) DEVICE FOR LIMITING ELECTRICAL ALTERNATING CURRENTS, ESPECIALLY DURING SHORT-CIRCUITS
(FR) DISPOSITIF POUR LIMITER DES COURANTS ELECTRIQUES ALTERNATIFS, NOTAMMENT EN CAS DE COURT-CIRCUIT
Abstract:
(DE) Die Vorrichtung zum Begrenzen elektrischer Wechselströme umfaßt a) wenigstens eine in den Strompfad des Wechselstromes geschaltete Halbleiteranordnung (H1, H2, H3), die so ausgebildet oder steuerbar ist, daß sie bei Anliegen einer Vorwärtsspannung von einem Vorwärtsstrom durchflossen wird, der mit ab Spannung Null steigender Vorwärtsspannung bis auf einen Sättigungsstrom bei einer zugehörigen Sättigungsspannung monoton zunimmt und bei einer oberhalb der Sättigungsspannung liegenden Vorwärtsspannung auf einen Begrenzungsstrom unterhalb des Sättigungsstromes begrenzt wird, und bei Anliegen einer Rückwärtsspannung von einem Rückwärtsstrom durchflossen wird, der mit ab Spannung Null steigender Rückwärtsspannung bis zu einer vorgegebenen Rückwärtsdurchbruchsspannung monoton zunimmt und bei Überschreiten der Rückwärtsdurchbruchsspannung aufgrund eines Ladungsträgerdurchbruchs deutlich stärker ansteigt, und b) eine Schutzschaltung, die verhindert, daß die Halbleiteranordnung (H1, H2, H3) in der in ihrer Rückwärtsrichtung gepolten Halbwelle des Wechselstromes, insbesondere in einem Überstrom- oder Kurzschlußfall, in die Rückwärtsdurchbruchsspannung getrieben wird.
(EN) The invention relates to a device for limiting electrical alternating currents, comprising a) at least one semiconductor device (H1, H2, H3) which is connected in the current path of the alternating current. Said semiconductor device is configured or can be controlled in such a way that when a forward voltage is applied, a forward current flows through the device. Said forward current increases monotonously with a forward voltage starting from zero voltage to a saturation current with a corresponding saturation voltage. When the forward voltage exceeds the saturation voltage, said forward voltage is limited to a limit current below the saturation current. When a backward voltage is applied, a backward current flows through the semiconductor device. Said backward current increases monotonously with a backward voltage starting from zero voltage to a predetermined backward breakdown voltage. When the predetermined backward breakdown voltage is exceeded, the backward current increases significantly more sharply due to a charge carrier breakdown. The inventive device for limiting electrical alternating currents also comprises b) a circuit breaker which prevents the semi-conductor device (H1, H2, H3) from being driven into the backward breakdown voltage in the half-wave of the alternating current, which is polarised in its backward direction, especially in the event of an overload or a short circuit.
(FR) L'invention concerne un dispositif pour limiter des courants électriques alternatifs, comprenant au moins un dispositif à semiconducteur (H1, H2, H3) monté dans le chemin du courant alternatif, conçu ou pouvant être commandé de façon à être parcouru par un courant direct, lors de l'application d'une tension directe. Ledit courant direct augmente de façon monotone, lorsque la tension directe augmente à partir de la tension nulle, jusqu'à un courant de saturation à une tension de saturation correspondante, et ledit courant direct est limité à un courant de limitation inférieur au courant de saturation, à une tension directe supérieure à la tension de saturation. Lors de l'application d'une tension inverse, le dispositif semiconducteur est parcouru par un courant inverse qui augmente de façon monotone, lorsque la tension inverse augmente à partir de la tension nulle, jusqu'à une tension de claquage prédéterminée, et qui augmente nettement plus fortement lorsque la tension de claquage est dépassée en raison d'un claquage d'un porteur de charge. Le dispositif de l'invention comprend également un circuit de protection qui empêche le dispositif à semiconducteur (H1, H2, H3) dans la demi-onde du courant alternatif, polarisée dans sa direction inverse, d'être soumis à la tension de claquage, notamment en cas de court-circuit ou de surintensité.
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Designated States: CN, JP, US
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
Publication Language: German (DE)
Filing Language: German (DE)
Also published as:
EP0978159US6188555JP2001522528 CN1253668