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1. (WO1998049721) IMPROVED PROCESS FOR PRODUCING NANOPOROUS SILICA THIN FILMS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1998/049721 International Application No.: PCT/US1998/008965
Publication Date: 05.11.1998 International Filing Date: 29.04.1998
Chapter 2 Demand Filed: 25.11.1998
IPC:
C23C 18/12 (2006.01) ,H01L 21/314 (2006.01) ,H01L 21/316 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
18
Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
02
by thermal decomposition
12
characterised by the deposition of inorganic material other than metallic material
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314
Inorganic layers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314
Inorganic layers
316
composed of oxides or glassy oxides or oxide-based glass
Applicants:
ALLIEDSIGNAL INC. [US/US]; 101 Columbia Road P.O. Box 2245 Morristown, NJ 07962-2245, US
Inventors:
SMITH, Douglas, M.; US
RAMOS, Theresa; US
RODERICK, Kevin, H.; US
WALLACE, Stephen; US
Agent:
GOTTS, Lawrence, J. ; Crowell & Moring LLP 1001 Pennsylvania Avenue, N.W. Washington, DC 20004-2595, US
Priority Data:
09/054,26203.04.1998US
60/044,40229.04.1997US
Title (EN) IMPROVED PROCESS FOR PRODUCING NANOPOROUS SILICA THIN FILMS
(FR) PROCEDE AMELIORE D'OBTENTION DE COUCHES MINCES NANOPOREUSES DE SILICE
Abstract:
(EN) A process for forming a nanoporous dielectric coating on a substrate. The process follows the steps of blending an alkoxysilane with a solvent composition and optional water; depositing the mixture onto a substrate while evaporating at least a portion of the solvent composition; placing the substrate in a sealed chamber and evacuating the chamber to a pressure below atmospheric pressure; exposing the substrate to water vapor at a pressure below atmospheric pressure and then exposing the substrate to base vapor.
(FR) L'invention porte sur un procédé de formation d'un revêtement diélectrique nanoporeux sur un substrat comportant les étapes suivantes: mélange d'un alkoxysilane avec un solvant et facultativement de l'eau; dépôt du mélange sur un substrat pendant l'évaporation au moins partielle du solvant; pose du substrat dans une chambre étanche dont la pression est abaissée au-dessous de la pression atmosphérique; exposition du substrat à de la vapeur d'eau sous une pression inférieure à la pression atmosphérique; et exposition du substrat à de la vapeur basique.
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Designated States: AM, AT, AU, BB, BG, BR, BY, CA, CH, CN, CZ, DE, DK, EE, ES, FI, GB, GE, HU, IS, JP, KE, KG, KP, KR, KZ, LK, LR, LT, LU, LV, MD, MG, MN, MW, MX, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, TJ, TM, TT, UA, UG, UZ, VN
African Regional Intellectual Property Organization (ARIPO) (GH, GM, KE, LS, MW, SD, SZ, UG, ZW)
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
KR1020010020287EP0993684JP2001522536 AU1998073662