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1. (WO1998049601) POSITIVE RESIST COMPOSITION FOR PHOTOMASK PREPARATION
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1998/049601 International Application No.: PCT/JP1998/001964
Publication Date: 05.11.1998 International Filing Date: 30.04.1998
Chapter 2 Demand Filed: 10.08.1998
IPC:
G03F 7/004 (2006.01) ,G03F 1/00 (2012.01) ,G03F 7/022 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
04
Chromates
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1
Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
022
Quinonediazides
Applicants:
NIPPON ZEON CO., LTD. [JP/JP]; 6-1, Marunouchi 2-chome Chiyoda-ku Tokyo 100-0005, JP (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, JP, KR, LU, MC, NL, PT, SE)
KATO, Takeyoshi [JP/JP]; JP (UsOnly)
Inventors:
KATO, Takeyoshi; JP
Agent:
NISHIKAWA, Shigeaki; Visual City 401 43-8, Higashi-Nippori 3-chome Arakawa-ku Tokyo 116-0014, JP
Priority Data:
9/12653030.04.1997JP
9/13426608.05.1997JP
Title (EN) POSITIVE RESIST COMPOSITION FOR PHOTOMASK PREPARATION
(FR) COMPOSITION DE PHOTORESINE POSITIVE POUR PHOTOMASQUE
Abstract:
(EN) A positive resist composition for preparing a photomask, which contains an alkali-soluble phenol resin (A), a quinonediazidesulfonic ester (B) and a solvent (C), characterized in that the solvent (C) contains a linear, branched or cyclic ketone compound (C1) having 6 to 8 carbon atoms; and a process for preparing a photomask by using the positive resist composition.
(FR) L'invention concerne une composition de photorésine positive permettant de préparer un photomasque, qui contient une résine phénolique soluble dans les alcalis (A), un ester quinonediazidesulfonique (B) et un solvant (C), caractérisée par le fait que le solvant (C) contient un composé cétonique linéaire, ramifié ou cyclique (C1) renfermant 6 à 8 atomes de carbone. L'invention concerne également un procédé permettant de préparer un photomasque au moyen de ladite composition de photorésine positive.
Designated States: JP, KR, US
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)