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1. (WO1998049378) METHOD FOR SINGLE CRYSTAL GROWTH
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1998/049378 International Application No.: PCT/JP1998/001975
Publication Date: 05.11.1998 International Filing Date: 30.04.1998
IPC:
C30B 15/30 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15
Single-crystal growth by pulling from a melt, e.g. Czochralski method
30
Mechanisms for rotating or moving either the melt or the crystal
Applicants:
SUMITOMO SITIX CORPORATION [JP/JP]; 1, Higashihamacho Amagasaki-shi Hyogo 660-0844, JP (DE)
IZUMI, Teruo [JP/JP]; JP (UsOnly)
Inventors:
IZUMI, Teruo; JP
Agent:
UBUKATA, Motoshige ; 6-15, Kawaramachi 4-chome Chuo-ku Osaka-shi Osaka 541-0048, JP
Priority Data:
9/12802030.04.1997JP
Title (EN) METHOD FOR SINGLE CRYSTAL GROWTH
(FR) PROCEDE DE TIRAGE DE MONOCRISTAL
Abstract:
(EN) A method for single crystal growth which comprises pulling a single crystal (6) by the CZ method from a starting melt (5) with a cusped magnetic field applied thereto. Regarding a crucible (3) for containing therein the starting melt (5), the inner diameter U is adjusted to (Y + 140 mm) to less than 3Y, wherein Y represents the outer diameter of the single crystal (6). In a state where the cusped magnetic field has been applied, a high pulling yield can be maintained even when the inner diameter U is reduced. Reducing the inner diameter U serves to improve the yields of oxygen and non-dislocation. This in turn can improve the yield of the preparation of the single crystal (6).
(FR) L'invention a pour objet un procédé de tirage de monocristal, qui consiste à tirer un monocristal (6) par la méthode Czochralski à partir d'un bain de départ (5) auquel un champ magnétique cuspidé est appliqué. Le creuset (3) contenant le bain de départ (5) possède un diamètre intérieur U réglé entre (Y + 140 mm) et moins de 3Y, Y représentant le diamètre extérieur du monocristal (6). Une fois l'application du champ magnétique cuspidé effectuée, on peut maintenir un rendement élevé du tirage, même lorsque le diamètre intérieur U est réduit. On réduit le diamètre intérieur U pour améliorer le rendement de l'oxygène et la nondislocation, ce qui permet d'améliorer le rendement de la préparation du monocristal (6).
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Designated States: DE, US
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
US6267816