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1. (WO1998049371) APPARATUS FOR PRODUCING TITANIUM CRYSTAL AND TITANIUM
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1998/049371 International Application No.: PCT/US1998/008753
Publication Date: 05.11.1998 International Filing Date: 30.04.1998
Chapter 2 Demand Filed: 25.11.1998
IPC:
C23C 14/34 (2006.01) ,C25C 3/28 (2006.01) ,C25C 7/00 (2006.01) ,C25C 7/06 (2006.01) ,C30B 9/00 (2006.01) ,C30B 9/14 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
34
Sputtering
C CHEMISTRY; METALLURGY
25
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
C
PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
3
Electrolytic production, recovery or refining of metals by electrolysis of melts
26
of titanium, zirconium, hafnium, tantalum or vanadium
28
of titanium
C CHEMISTRY; METALLURGY
25
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
C
PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
7
Constructional parts, or assemblies thereof, of cells; Servicing or operating of cells
C CHEMISTRY; METALLURGY
25
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
C
PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
7
Constructional parts, or assemblies thereof, of cells; Servicing or operating of cells
06
Operating or servicing
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
9
Single-crystal growth from melt solutions using molten solvents
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
9
Single-crystal growth from melt solutions using molten solvents
14
by electrolysis
Applicants:
THE ALTA GROUP, INC. [US/US]; R.R.2, Box 710 Marion School Road Fombell, PA 16123-9403, US (AL, AM, AT, AU, AZ, BA, BB, BE, BF, BG, BJ, BR, BY, CA, CF, CG, CH, CI, CM, CN, CU, CY, CZ, DE, DK, EE, ES, FI, FR, GA, GB, GE, GH, GM, GN, GR, GW, HU, ID, IE, IL, IS, IT, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MC, MD, MG, MK, ML, MN, MR, MW, MX, NE, NL, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, SN, SZ, TD, TG, TJ, TM, TR, TT, UA, UG, UZ, VN, YU, ZW)
ROSENBERG, Harry [US/US]; US (UsOnly)
WINTERS, Nigel [GB/GB]; US (UsOnly)
XU, Yun [CN/CN]; US (UsOnly)
Inventors:
ROSENBERG, Harry; US
WINTERS, Nigel; US
XU, Yun; US
Agent:
GIOIA, Vincent, G.; Christie, Parker & Hale, LLP P.O. Box 7068 Pasadena, CA 91109-7068, US
Priority Data:
08/846,28930.04.1997US
08/994,73319.12.1997US
Title (EN) APPARATUS FOR PRODUCING TITANIUM CRYSTAL AND TITANIUM
(FR) APPAREIL PERMETTANT DE PRODUIRE DES CRISTAUX DE TITANE ET DU TITANE
Abstract:
(EN) Described is a method and apparatus for producing high purity titanium. The process contemplates producing titanium sponge (2) in a container (1) and performing titanium fused salt electrolysis in situ in the same container to produce high purity titanium crystal, and where especially low oxygen content is desired, to treat the high purity titanium crystal as produced with iodine.
(FR) Appareil et procédé permettant de produire du titane extrêmement pur. Ledit procédé consiste à produire de l'éponge (2) de titane dans une cuve (1) et à électrolyser le titane dans un bain de sels fondus in situ dans la même cuve pour produire des cristaux de titane extrêmement purs et lorsqu'une teneur particulièrement basse en oxygène est désirée, à traiter les cristaux de titane extrêmement purs par une réaction avec de l'iode.
Designated States: AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, CA, CH, CN, CU, CZ, DE, DK, EE, ES, FI, GB, GE, GH, GM, GW, HU, ID, IL, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MD, MG, MK, MN, MW, MX, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, UA, UG, US, UZ, VN, YU, ZW
African Regional Intellectual Property Organization (ARIPO) (GH, GM, KE, LS, MW, SD, SZ, UG, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
AU1998071713