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1. WO1998037582 - SEMICONDUCTOR CIRCUIT

Publication Number WO/1998/037582
Publication Date 27.08.1998
International Application No. PCT/DE1998/000503
International Filing Date 19.02.1998
Chapter 2 Demand Filed 21.08.1998
IPC
H01L 27/088 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
08including only semiconductor components of a single kind
085including field-effect components only
088the components being field-effect transistors with insulated gate
H01L 27/092 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
08including only semiconductor components of a single kind
085including field-effect components only
088the components being field-effect transistors with insulated gate
092complementary MIS field-effect transistors
CPC
H01L 27/088
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
08including only semiconductor components of a single kind
085including field-effect components only
088the components being field-effect transistors with insulated gate
H01L 27/0928
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
08including only semiconductor components of a single kind
085including field-effect components only
088the components being field-effect transistors with insulated gate
092complementary MIS field-effect transistors
0928comprising both N- and P- wells in the substrate, e.g. twin-tub
Applicants
  • SIEMENS AKTIENGESELLSCHAFT [DE]/[DE] (AllExceptUS)
  • BLOCH, Martin [DE]/[DE] (UsOnly)
Inventors
  • BLOCH, Martin
Priority Data
197 06 537.619.02.1997DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) HALBLEITER-SCHALTUNGSANORDNUNG
(EN) SEMICONDUCTOR CIRCUIT
(FR) CIRCUIT A SEMI-CONDUCTEUR
Abstract
(DE)
Die Erfindung bezieht sich auf eine Halbleiter-Schaltungsanordnung mit einem über ein Eingangssteuersignal steuerbaren Inverter (17) und einem dem Inverter (17) nachgeschalteten und von diesem angesteuerten Transfertransistor (2), an dessen einem Elektrodenanschluss (Source 3) eine zu schaltende Arbeitsspannung anliegt, wobei Inverter (17) und Transfertransistor (2) als integrierte Halbleiterschaltungselemente in einem Halbleitersubstrat (9) mit einem vorbestimmten ersten Leitfähigkeitstyp (p) ausgebildet sind. Der Transfertransistor (2) ist durch einen innerhalb einer in dem Halbleitersubstrat (9) eingebetteten äußeren Wanne (10) eines zweiten, gegenüber dem ersten Leitfähigkeitstyp entgegengesetzten Leitfähigkeitstyps (n) ausgebildeten Tripple-Well-Feldeffekttransistor mit einem der äußeren Wanne (10) vom zweiten Leitfähigkeitstyp (n) zugeordneten Wannenanschluss (5, 15) und einem einer inneren Wanne (11) zugeordneten Bulk-Anschluss (5, 16) ausgebildet, welcher Bulk-Anschluss (5, 16) gegenüber dem Halbleitersubstrat (9) vom ersten Leitfähigkeitstyp elektrisch isoliert ist.
(EN)
The invention relates to a semiconductor circuit comprising an inverter (17) that can be controlled by an input control signal, and a transfer transistor (2) positioned downstream of, and controlled by, said inverter (17). One of the electrode connections (source 3) of the transistor is connected to an operating voltage to be switched. The inverter (17) and transfer transistor (2) are configured as integrated semiconductor switching elements in a semiconductor substrate (9) of a predetermined first conductivity type (p). The transfer transistor (2) is embodied by a triple-well field effect transistor which is configured inside an external trough (10) embedded in the semiconductor substrate (9) and is of a second conductivity type (n) that is the opposite of the first conductivity type (p). Said triple-well field effect transistor has a trough connection (5, 15) assigned to the external trough (10) of the second conductivity type (n), and a bulk connection (5, 16) assigned to an inner trough (11). Said bulk connection (5, 16) is electrically isolated from the semiconductor substrate (9) of the first conductivity type.
(FR)
L'invention concerne un circuit à semi-conducteur comprenant un onduleur (17) pouvant être commandé par un signal de commande d'entrée, et un transistor de transfert monté en aval de l'inverseur et commandé par ce dernier. Une tension de travail est appliquée à une électrode (source 3) du transistor de transfert. L'onduleur (17) et le transistor de transfert (2) sont conçus sous forme d'éléments d'un circuit à semi-conducteur intégrés dans un substrat de semi-conducteur (9) d'un premier type de conductivité (p) déterminé. Le transistor de transfert (2) est conçu sous la forme d'un transistor à effet de champ triple puits réalisé à l'intérieur d'une auge (10) extérieure encastrée dans le substrat de semi-conducteur (9) d'un second type de conductivité (n) opposé au premier type de conductivité. Le transistor à effet de champ triple puits est doté d'une connexion d'auge (5, 15) affectée à l'auge extérieure (10) du second type de conductivité (n) et d'une connexion non épitaxiée (5, 16) qui est isolée du substrat (6) de semi-conducteur du premier type de conductivité.
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