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1. WO1998037257 - POWER SUPPLY UNIT FOR SPUTTERING DEVICE

Publication Number WO/1998/037257
Publication Date 27.08.1998
International Application No. PCT/JP1998/000693
International Filing Date 19.02.1998
Chapter 2 Demand Filed 10.07.1998
IPC
C23C 14/34 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
C23C 14/54 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
54Controlling or regulating the coating process
H01J 37/34 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes
34operating with cathodic sputtering
CPC
C23C 14/54
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
54Controlling or regulating the coating process
H01J 2237/0206
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
02Details
0203Protection arrangements
0206Extinguishing, preventing or controlling unwanted discharges
H01J 37/34
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
34operating with cathodic sputtering
H01J 37/3444
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
34operating with cathodic sputtering
3411Constructional aspects of the reactor
3444Associated circuits
Applicants
  • SHIBAURA MECHATRONICS CORPORATION [JP]/[JP] (AllExceptUS)
  • KURIYAMA, Noboru [JP]/[JP] (UsOnly)
  • YATSU, Yutaka [JP]/[JP] (UsOnly)
  • KAWAMATA, Yoshio [JP]/[JP] (UsOnly)
  • FUJII, Takashi [JP]/[JP] (UsOnly)
Inventors
  • KURIYAMA, Noboru
  • YATSU, Yutaka
  • KAWAMATA, Yoshio
  • FUJII, Takashi
Agents
  • SUZUYE, Takehiko
Priority Data
9/3624820.02.1997JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) POWER SUPPLY UNIT FOR SPUTTERING DEVICE
(FR) BLOC D'ALIMENTATION POUR DISPOSITIF DE PULVERISATION CATHODIQUE
Abstract
(EN)
In a circuit for preventing arc discharge by applying a reverse voltage pulse, after completion of application of a reverse voltage pulse, a reverse voltage generated by reverse voltage generating means (12) within 1-10 $g(m)s in the case where generation of arc discharge is detected by arc discharge detecting means (23), is applied to a sputtering source, thereby lowering the generation probability of continuous arc discharge. At the same time, a currrent at the time of application of the reverse voltage is limited by a diode (D10) connected in series with the sputtering source (14) and a resistor (r10) connected in parallel with the diode (D10), thereby reducing continuous arc discharge due to reverse arc discharge.
(FR)
Dans un circuit destiné à éviter la formation d'une décharge d'arc par application d'une impulsion en tension inverse, une fois l'impulsion envoyée, on applique à la source de pulvérisation cathodique une tension inverse produite par un organe de génération de tension inverse (12) de l'ordre de 1-10 $g(m)s dans le cas où la production de décharge d'arc est détectée par un capteur prévu à cet effet (23), ce qui abaisse les probabilités de production de décharge d'arc en continu. En même temps, une diode (D10) et une résistance (r10) limitent le courant lors de l'application de la tension inverse, laquelle diode est montée en série à la source de pulvérisation cathodique (14), la résistance (r10) étant monté en parallèle avec la diode (D10), ce qui a pour effet de réduire la décharge d'arc en continu occasionnée par une décharge d'arc inverse.
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