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Machine translation
1. (WO1998032177) A SCHOTTKY DIODE OF SiC AND A METHOD FOR PRODUCTION THEREOF
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1998/032177    International Application No.:    PCT/SE1998/000074
Publication Date: 23.07.1998 International Filing Date: 19.01.1998
Chapter 2 Demand Filed:    17.07.1998    
IPC:
H01L 21/04 (2006.01), H01L 29/24 (2006.01), H01L 29/872 (2006.01)
Applicants: ABB RESEARCH LIMITED [CH/CH]; P.O. Box 8131, CH-8050 Zürich (CH) (For All Designated States Except US).
HERMANSSON, Willy [SE/SE]; (SE) (For US Only).
BIJLENGA, Bo [SE/SE]; (SE) (For US Only).
RAMBERG, Lennart [SE/SE]; (SE) (For US Only).
ROTTNER, Kurt [DE/SE]; (SE) (For US Only).
ZDANSKY, Lennart [SE/SE]; (SE) (For US Only).
HARRIS, Christopher [GB/SE]; (SE) (For US Only).
BAKOWSKI, Mietek [SE/SE]; (SE) (For US Only).
SCHÖNER, Adolf [DE/SE]; (SE) (For US Only).
LUNDBERG, Nils [SE/SE]; (SE) (For US Only).
ÖSTLING, Mikael [SE/SE]; (SE) (For US Only).
DAHLQUIST, Fanny [SE/SE]; (SE) (For US Only)
Inventors: HERMANSSON, Willy; (SE).
BIJLENGA, Bo; (SE).
RAMBERG, Lennart; (SE).
ROTTNER, Kurt; (SE).
ZDANSKY, Lennart; (SE).
HARRIS, Christopher; (SE).
BAKOWSKI, Mietek; (SE).
SCHÖNER, Adolf; (SE).
LUNDBERG, Nils; (SE).
ÖSTLING, Mikael; (SE).
DAHLQUIST, Fanny; (SE)
Agent: BJERKÉN, Håkan; Bjerkéns Patentbyrå KB, P.O. Box 1274, S-801 37 Gävle (SE)
Priority Data:
9700141-6 20.01.1997 SE
Title (EN) A SCHOTTKY DIODE OF SiC AND A METHOD FOR PRODUCTION THEREOF
(FR) DIODE SCHOTTKY EN SIC ET PROCEDE DE PRODUCTION CORRESPONDANT
Abstract: front page image
(EN)A Schottky diode of SiC has a substrate layer, a drift layer (2) and emitter layer regions (3) formed in the drift layer. A metal layer (4) is making an ohmic contact to the emitter layer regions and Schottky contact to the drift layer. A depletion of the drift layer region between two adjacent emitter layer regions is allowed in the blocking state of the diode making said two adjacent p-type emitter layer regions form a continuous depleted region (9) therebetween in this state.
(FR)L'invention concerne une diode Schottky en carbure de silicium (sic) comprenant une couche substrat, une couche de migration (2) et des régions émettrices (3) formées dans la couche de migration. Une couche métallique (4) assure un contact ohmique avec les régions émettrices et un contact Schottky avec la couche de migration. Un appauvrissement de la région de la migration entre les deux émettrices adjacentes est autorisé lorsque la diode est à l'état bloqué, les deux régions émettrices de type p adjacentes formant ainsi une région appauvrie (9) continue entre les deux régions émettrices adjacentes à l'état mentionné.
Designated States: JP, US.
European Patent Office (AT, BE, CH, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE).
Publication Language: English (EN)
Filing Language: English (EN)