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1. WO1998016951 - A METHOD FOR PRODUCING A SILICON CARBIDE BIPOLAR DEVICE AND A SILICON CARBIDE BIPOLAR DEVICE

Publication Number WO/1998/016951
Publication Date 23.04.1998
International Application No. PCT/SE1997/001614
International Filing Date 25.09.1997
Chapter 2 Demand Filed 26.03.1998
IPC
H01L 21/04 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
H01L 29/24 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
12characterised by the materials of which they are formed
24including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20 or H01L29/22246
H01L 29/36 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
36characterised by the concentration or distribution of impurities
H01L 29/861 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861Diodes
CPC
H01L 21/263
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with radiation
263with high-energy radiation
H01L 29/1608
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
16including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
1608Silicon carbide
H01L 29/36
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
36characterised by the concentration or distribution of impurities ; in the bulk material
H01L 29/6606
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66053of devices having a semiconductor body comprising crystalline silicon carbide
6606the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
H01L 29/861
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
861Diodes
Y10S 148/018
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
148Metal treatment
018Compensation doping
Applicants
  • ABB RESEARCH LTD. [CH]/[CH] (AllExceptUS)
  • HERMANSSON, Willy [SE]/[SE] (UsOnly)
Inventors
  • HERMANSSON, Willy
Agents
  • BJERKÉN, Håkan
Priority Data
9603738-714.10.1996SE
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) A METHOD FOR PRODUCING A SILICON CARBIDE BIPOLAR DEVICE AND A SILICON CARBIDE BIPOLAR DEVICE
(FR) PROCEDE DE PRODUCTION D'UN DISPOSITIF BIPOLAIRE DE CARBURE DE SILICIUM, ET UN TEL DISPOSITIF
Abstract
(EN)
A method for producing a bipolar semiconductor device having a first layer (3) doped according to a first doping type, said first layer being adapted to have minority charge carriers injected thereinto from a second layer (5) of the device of an opposite doping type to that of the first layer in a forward conducting state of the device, comprises a step of epitaxially growing said first layer during which at least one region (4) of said first layer is provided with a constitution implying a lower lifetime of said minority charge carriers therein than in other parts of said first layer by incorporating impurities in said region during the epitaxial growth thereof.
(FR)
Ce procédé de production d'un dispositif à semi-conducteur bipolaire possédant une première couche (3) dopée selon un premier type de dopage et conçue pour recevoir l'injection de porteurs de charge minoritaires, à partir d'une seconde couche (5) du dispositif, dont le dopage est différent de celui de la première couche dans un état conducteur du dispositif, comprend l'étape de croissance épitaxiale de la première couche au cours de laquelle au moins une région (4) de cette première couche est dotée, par incorporation d'impuretés dans celle-ci, d'une constitution impliquant une durée de vie inférieure pour lesdits porteurs de charge minoritaires injectés dans cette région, que pour ceux des autres parties de cette première couche.
Also published as
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