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1. WO1998014994 - SEMICONDUCTOR FABRICATION

Publication Number WO/1998/014994
Publication Date 09.04.1998
International Application No. PCT/GB1997/001965
International Filing Date 22.07.1997
Chapter 2 Demand Filed 28.11.1997
IPC
H01L 21/322 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
322to modify their internal properties, e.g. to produce internal imperfections
CPC
H01L 21/3225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
322to modify their internal properties, e.g. to produce internal imperfections
3221of silicon bodies, e.g. for gettering
3225Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
Applicants
  • LSI LOGIC CORPORATION [US]/[US]
  • GILL, David, Alan [GB]/[GB] (MG)
Inventors
  • DANIEL, David
  • MOORE, Theodore, C.
  • HASS, Crystal, J.
Common Representative
  • GILL, David, Alan
Priority Data
08/720,51430.09.1996US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SEMICONDUCTOR FABRICATION
(FR) FABRICATION DE SEMI-CONDUCTEURS
Abstract
(EN)
The present invention provides a method of manufacturing a semiconductor device on a substrate (100). The process involves denuding the substrate (100) by heating to create a denuded zone (102) within the substrate. A screen oxide layer (112) is formed prior to implanting ions into the substrate (100) and this oxide layer (112) remains during the implantation step. The screen oxide layer (112) can then be removed when forming gates for the semiconductor device.
(FR)
La présente invention concerne un procédé pour fabriquer un dispositif à semi-conducteurs sur un substrat (100). Ce procédé consiste à dénuder le substrat (100) en le chauffant pour créer une zone dénudée (102) dans ce dernier. Une couche d'oxyde formant écran (112) est formée avant d'implanter les ions dans le substrat (100) et cette couche d'oxyde (112) est conservée pendant l'étape d'implantation. Cette couche d'oxyde formant écran (112) peut être ensuite retirée lors de la formation des grilles du dispositif à semi-conducteurs.
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