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1. WO1997049122 - METHOD FOR CLEANING A HOLE

Publication Number WO/1997/049122
Publication Date 24.12.1997
International Application No. PCT/NL1997/000339
International Filing Date 18.06.1997
Chapter 2 Demand Filed 14.01.1998
IPC
H01L 21/306 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
H01L 21/768 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71Manufacture of specific parts of devices defined in group H01L21/7086
768Applying interconnections to be used for carrying current between separate components within a device
CPC
H01L 21/02063
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02041Cleaning
02057Cleaning during device manufacture
0206during, before or after processing of insulating layers
02063the processing being the formation of vias or contact holes
H01L 21/76814
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76801characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
76802by forming openings in dielectrics
76814post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
Applicants
  • TECHNISCHE UNIVERSITEIT DELFT [NL]/[NL] (AllExceptUS)
  • JANSSEN, Guido, Cornelis, Antonius, Maria [NL]/[NL] (UsOnly)
Inventors
  • JANSSEN, Guido, Cornelis, Antonius, Maria
Agents
  • DE BRUIJN, Leendert, C.
Priority Data
100337319.06.1996NL
Publication Language English (EN)
Filing Language Dutch (NL)
Designated States
Title
(EN) METHOD FOR CLEANING A HOLE
(FR) PROCEDE DE NETTOYAGE D'UN TROU
Abstract
(EN)
Method for making a conducting connection between two spaced metallic layers situated in a semiconductor substrate. After a hole, a so-called via, has been made by etching, tungsten or aluminium is introduced into the hole by conventional techniques, such as CVD or force filling. In order to provide optimum connection to the bottom metallic layer of the hole, it is necessary to clean the latter. It is proposed that this cleaning should be carried out with germane-containing gas.
(FR)
L'invention porte sur un procédé servant à établir une connexion conductrice entre deux couches métalliques espacées d'un substrat de semi-conducteur. Après percement d'un trou ou via par voie chimique, on introduit dans le trou du tungstène ou de l'aluminium au moyen de techniques classiques (procédé chimique en phase vapeur ou remplissage forcé). Pour obtenir une très bonne connexion avec la couche métallique du fond du trou, ce dernier doit être nettoyé. On envisage à cet effet l'utilisation d'un gaz contenant du germane.
Also published as
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