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1. WO1997045882 - METHOD FOR MANUFACTURING THERMOELECTRIC MODULE

Publication Number WO/1997/045882
Publication Date 04.12.1997
International Application No. PCT/JP1997/001797
International Filing Date 27.05.1997
IPC
H01L 35/32 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
28operating with Peltier or Seebeck effect only
32characterised by the structure or configuration of the cell or thermo-couple forming the device
H01L 35/34 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
34Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
CPC
H01L 35/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
28operating with Peltier or Seebeck effect only
32characterised by the structure or configuration of the cell or thermo-couple forming the device ; including details about, e.g., housing, insulation, geometry, module
H01L 35/325
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
28operating with Peltier or Seebeck effect only
32characterised by the structure or configuration of the cell or thermo-couple forming the device ; including details about, e.g., housing, insulation, geometry, module
325Cascades of thermo-couples
H01L 35/34
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
34Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
Y10S 257/93
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
257Active solid-state devices, e.g. transistors, solid-state diodes
93Thermoelectric, e.g. peltier effect cooling
Applicants
  • MATSUSHITA ELECTRIC WORKS, LTD. [JP]/[JP] (AllExceptUS)
  • MAEGAWA, Nobuteru [JP]/[JP] (UsOnly)
  • OKADA, Hiroaki [JP]/[JP] (UsOnly)
  • TSUZAKI, Michimasa [JP]/[JP] (UsOnly)
  • SAKAI, Yuri [JP]/[JP] (UsOnly)
  • SHIMODA, Katsuyoshi [JP]/[JP] (UsOnly)
  • KOMATSU, Teruaki [JP]/[JP] (UsOnly)
  • MURASE, Shinya [JP]/[JP] (UsOnly)
  • INOUE, Hiroyuki [JP]/[JP] (UsOnly)
  • SAGAWA, Masayuki [JP]/[JP] (UsOnly)
Inventors
  • MAEGAWA, Nobuteru
  • OKADA, Hiroaki
  • TSUZAKI, Michimasa
  • SAKAI, Yuri
  • SHIMODA, Katsuyoshi
  • KOMATSU, Teruaki
  • MURASE, Shinya
  • INOUE, Hiroyuki
  • SAGAWA, Masayuki
Agents
  • ISHIDA, Choshichi
Priority Data
8/13399628.05.1996JP
8/13399728.05.1996JP
8/15767528.05.1996JP
8/15767728.05.1996JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD FOR MANUFACTURING THERMOELECTRIC MODULE
(FR) PROCEDE DE FABRICATION D'UN MODULE THERMOELECTRIQUE
Abstract
(EN)
In a method for manufacturing a thermoelectric module in which a plurality of thermoelectric chips is arranged in a matrix-like state and electrically connected in series with each other between first and second insulating substrates and the first substrate side is heated and the second substrate is cooled with a Peltier effect produced by each thermoelectric chip, a lateral bridge is cut simultaneously with N- and P-type long thermoelectric bars which are to be cut into the thermoelectric chips after first electrodes which are adjacently arranged to each other in the direction of row are retained on the first substrate by using a first conductor plate which integrally couples the thermoelectric bars with the first electrode in one body with the lateral bridge. Since the thermoelectric bars on the first eletrodes are surely supported by the first substrate, the thermoelectric bars can be surely and easily cut into the chips and, since the chips are supported by the first substrate together with the electrodes, the chips can be held stably in the succeeding manufacturing process of a thermoelectric module and the module can be assembled easily.
(FR)
La présente invention, qui concerne un procédé de fabrication d'un module thermoélectrique, consiste à disposer selon une matrice une pluralité de microcomposants thermoélectriques et à les connecter en série les uns avec les autres entre un premier et un second substrat isolant. Le procédé consiste ensuite à chauffer le côté du premier substrat et à refroidir le second substrat par l'effet Peltier de chacun des microcomposants thermoélectriques, puis à découper un pont latéral de même que des barres thermoélectriques longues dopées N et P à tailler dans les microcomposants thermoélectriques une fois que les premières électrodes, qui sont disposées côte à côte les unes des autres selon le sens d'une rangée, sont maintenues sur le premier substrat en utilisant une première plaque conductrice assurant un couplage intégral des barres thermoélectriques avec la première électrode à l'intérieur d'un corps pourvu du pont latéral. Etant donné que les barres thermoélectriques des premières électrodes sont maintenues en sécurité par le premier substrat, les barres thermoélectriques peuvent être taillées en toute sécurité et facilement dans les microcomposants et, étant donné que les microcomposants sont maintenus en contact avec les électrodes par le premier substrat, ces microcomposants peuvent être tenus de façon stable pour la suite du processus de fabrication d'un module thermoélectrique, ce qui facilite l'assemblage du module.
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