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1. WO1997040498 - MEMORY DEVICE TRACKING CIRCUIT

Publication Number WO/1997/040498
Publication Date 30.10.1997
International Application No. PCT/US1997/006600
International Filing Date 23.04.1997
Chapter 2 Demand Filed 21.11.1997
IPC
G11C 7/14 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
7Arrangements for writing information into, or reading information out from, a digital store
14Dummy cell management; Sense reference voltage generators
G11C 11/408 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21using electric elements
34using semiconductor devices
40using transistors
401forming cells needing refreshing or charge regeneration, i.e. dynamic cells
4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
407for memory cells of the field-effect type
408Address circuits
G11C 11/4099 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21using electric elements
34using semiconductor devices
40using transistors
401forming cells needing refreshing or charge regeneration, i.e. dynamic cells
4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
407for memory cells of the field-effect type
409Read-write circuits
4099Dummy cell treatment; Reference voltage generators
CPC
G11C 11/4085
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21using electric elements
34using semiconductor devices
40using transistors
401forming cells needing refreshing or charge regeneration, i.e. dynamic cells
4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
407for memory cells of the field-effect type
408Address circuits
4085Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
G11C 11/4099
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21using electric elements
34using semiconductor devices
40using transistors
401forming cells needing refreshing or charge regeneration, i.e. dynamic cells
4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
407for memory cells of the field-effect type
409Read-write [R-W] circuits 
4099Dummy cell treatment; Reference voltage generators
G11C 7/14
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
7Arrangements for writing information into, or reading information out from, a digital store
14Dummy cell management; Sense reference voltage generators
Applicants
  • MICRON TECHNOLOGY, INC. [US]/[US]
Inventors
  • SHIRLEY, Brian, M.
Agents
  • VIKSNINS, Ann, S.
Priority Data
08/636,28023.04.1996US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) MEMORY DEVICE TRACKING CIRCUIT
(FR) CIRCUIT DE SUIVI D'UNE MEMOIRE
Abstract
(EN)
Tracking circuitry is described for use in a memory device. The tracking circuitry can be used to monitor word line voltages in a dynamic random access memory (DRAM) and includes a comparator circuit which compares a simulated word line signal to a digit line equilibrate bias voltage. The equilibrate bias voltage is generated using either memory column circuitry or a linear resistor voltage divider.
(FR)
Circuit de suivi destiné à être utilisé dans une mémoire pour surveiller les tensions de lignes de mots dans une mémoire dynamique à accès sélectif (DRAM) et comprenant un circuit comparateur qui compare un signal de ligne de mots simulé à une tension de polarisation d'équilibrage de ligne de chiffres. La tension de polarisation d'équilibrage est générée soit au moyen d'un circuit de colonne de mémoire soit d'un diviseur de tension à résistance linéaire.
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