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Machine translation
1. (WO1997036843) TAPE CAST SILICON CARBIDE DUMMY WAFER
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1997/036843    International Application No.:    PCT/US1997/005188
Publication Date: 09.10.1997 International Filing Date: 31.03.1997
Chapter 2 Demand Filed:    21.08.1997    
IPC:
C04B 35/573 (2006.01), C04B 38/00 (2006.01)
Applicants: SAINT-GOBAIN INDUSTRIAL CERAMICS, INC. [US/US]; 1 New Bond Street, Box Number 15138, Worcester, MA 01615-0138 (US) (For All Designated States Except US).
HOLMES, Thomas, M. [US/US]; (US) (For US Only)
Inventors: HOLMES, Thomas, M.; (US)
Agent: DI MAURO, Thomas, M.; Saint-Gobain Corporation, 1 New Bond Street, Box Number 15138, Worcester, MA 01615-0138 (US)
Priority Data:
08/625,383 01.04.1996 US
Title (EN) TAPE CAST SILICON CARBIDE DUMMY WAFER
(FR) QUASI-PLAQUETTE EN CARBURE DE SILICIUM COULEE EN BANDE
Abstract: front page image
(EN)This invention relates to tape casting a silicon carbide slip to eventually produce a silicon carbide wafer having a thickness of between 0.5 and 1 mm and a diameter of at least 100 mm, the wafer preferably having a strength of at least 30 MPa, and a porosity wherein at least 85 % of the pores are no larger than 12 microns.
(FR)La présente invention concerne la fonte en bande d'un ruban de carbure de silicium pour produire en fin de processus une plaquette de carbure de silicium dont l'épaisseur se situe entre 0,5 et 1 mm pour un diamètre d'au moins 100 mm. Une telle plaquette résiste à une pression d'au moins 30 MPa, et sa porosité est telle qu'au moins 85 % des pores ne font pas plus de 12 microns.
Designated States: CA, CN, JP, KR, MX, SG, US.
European Patent Office (AT, BE, CH, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE).
Publication Language: English (EN)
Filing Language: English (EN)