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1. WO1997036822 - METHOD AND APPARATUS FOR GROWING EXTENDED CRYSTALS

Publication Number WO/1997/036822
Publication Date 09.10.1997
International Application No. PCT/IL1997/000112
International Filing Date 28.03.1997
Chapter 2 Demand Filed 28.10.1997
IPC
C01B 33/035 2006.01
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF
33Silicon; Compounds thereof
02Silicon
021Preparation
027by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
035by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
C30B 25/00 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
C30B 25/10 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02Epitaxial-layer growth
10Heating of the reaction chamber or the substrate
CPC
C01B 33/035
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
33Silicon; Compounds thereof
02Silicon
021Preparation
027by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
035by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
C30B 25/00
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
C30B 25/10
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
02Epitaxial-layer growth
10Heating of the reaction chamber or the substrate
C30B 29/06
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02Elements
06Silicon
Applicants
  • ELMATEC LTD. [IL]/[IL] (AllExceptUS)
  • ZARUDI, Moshe [IL]/[IL] (UsOnly)
  • TCHERNINA, Izida [IL]/[IL] (UsOnly)
  • KATSEN, Alexander [IL]/[IL] (UsOnly)
Inventors
  • ZARUDI, Moshe
  • TCHERNINA, Izida
  • KATSEN, Alexander
Agents
  • REINHOLD COHN AND PARTNERS
Priority Data
11777002.04.1996IL
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD AND APPARATUS FOR GROWING EXTENDED CRYSTALS
(FR) PROCEDE ET APPAREIL DE MISE EN CROISSANCE DE CRISTAUX ALLONGES
Abstract
(EN)
A method and apparatus for producing an extended crystal formed of a semiconductor material by depositing on a surface of an initial rod formed of a seed crystal particles of the semiconductor material from a reaction gas containing the latter. The initial rod is heated by supplying a conductive current passing therethrough. At least one parameter of the growing crystal is measured so as to determine as to whether or not this parameter is of a predetermined value thereof. Upon detecting that this at least one parameter is of the predetermined value, disconnecting the supply of the conductive current and providing a further heating of the growing crystal of a substantially uniform temperature distribution within a whole volume of the growing crystal. The further heating is provided by eddy currents produced within the growing crystal. The eddy currents are induced by an alternating magnetic field of a predetermined frequency so as to provide a skin effect in the growing crystal. A weight force of the growing crystal may then be reduced by means of a travelling magnetic field created in a manner to provide a movement of the waves thereof in a direction opposite to the direction of the weight force.
(FR)
Procédé et appareil de production d'un cristal allongé formé d'un matériau semi-conducteur, par dépôt, sur la surface d'une tige initiale composée d'un germe cristallin, de particules d'un matériau semi-conducteur provenant d'un gaz réactif contenant ce matériau. On chauffe la tige initiale en faisant passer un courant conducteur à travers elle. On mesure au moins un paramètre du cristal mis en croissance afin de déterminer si ce paramètre présente une valeur préétablie. Si c'est le cas, on déconnecte l'alimentation en courant conducteur et on chauffe à nouveau le cristal en croissance avec une répartition de température sensiblement uniforme dans tout le volume dudit cristal. Ce chauffage supplémentaire est assuré par des courants parasites produits dans le cristal et induits par un champ magnétique alternatif d'une fréquence prédéterminée, de sorte qu'un effet pelliculaire soit produit dans le cristal en croissance. Une charge pondérale du cristal peut ensuite être réduite au moyen d'un champ magnétique mobile créé de façon à entraîner un mouvement des ondes dans le sens opposé à celui de la charge pondérale.
Also published as
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