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1. WO1997036327 - A SEMICONDUCTOR PROCESSING METHOD FOR FORMING A CONTACT PEDESTAL FOR A STORAGE NODE OF A CAPACITOR IN INTEGRATED CIRCUITRY

Publication Number WO/1997/036327
Publication Date 02.10.1997
International Application No. PCT/US1997/004660
International Filing Date 21.03.1997
Chapter 2 Demand Filed 24.10.1997
IPC
H01L 21/8242 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
8239Memory structures
8242Dynamic random access memory structures (DRAM)
CPC
H01L 27/10852
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
108Dynamic random access memory structures
10844Multistep manufacturing methods
10847for structures comprising one transistor one-capacitor memory cells
1085with at least one step of making the capacitor or connections thereto
10852the capacitor extending over the access transistor
Applicants
  • MICRON TECHNOLOGY, INC. [US]/[US] (AllExceptUS)
  • DENNISON, Charles, H. [US]/[US] (UsOnly)
Inventors
  • DENNISON, Charles, H.
Agents
  • LATWESEN, David
Priority Data
08/622,59126.03.1996US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) A SEMICONDUCTOR PROCESSING METHOD FOR FORMING A CONTACT PEDESTAL FOR A STORAGE NODE OF A CAPACITOR IN INTEGRATED CIRCUITRY
(FR) PROCEDE DE TRAITEMENT DE SEMI-CONDUCTEURS DESTINE A FORMER UN SOCLE DE CONTACT POUR UN POINT NODAL A MEMOIRE D'UN CONDENSATEUR DE CIRCUIT INTEGRE
Abstract
(EN)
A semiconductor processing method of forming a contact pedestal includes: a) providing a node location (28) to which electrical connection is to be made; b) providing insulating dielectric material (30) over the node location; c) etching a contact opening into the insulating dielectric material over the node location to a sufficient degree but not to outwardly expose the node location, the contact opening having a base; d) providing a spacer layer over the insulating dielectric material within the contact opening to a thickness which less than completely fills the contact opening; e) anisotropically etching the spacer layer to form a sidewall spacer (44) within the opening; f) etching through the contact opening base to outwardly expose the node location; g) filling the contact opening with an electrically conductive material (56); h) rendering the sidewall spacer electrically conductive.
(FR)
L'invention concerne un procédé de traitement de semi-conducteur destiné à former un socle de contact et qui consiste à: a) créer un point nodal (28) sur lequel doit être effectuée une connexion électrique; b) appliquer un matériau diélectrique isolant (30) au-dessus du point nodal; c) créer une ouverture de contact par attaque chimique dans le matériau diélectrique isolant au-dessus du point nodal à un niveau suffisant, mais de façon à ne pas exposer en direction de l'extérieur le point nodal, l'ouverture du contact étant pourvue d'une base; d) créer une couche intercalaire sur le matériau diélectrique isolant à l'intérieur de l'ouverture du contact qui, de par son épaisseur, ne remplit pas complètement l'ouverture du contact; e) effectuer une attaque chimique anisotropique de la couche intercalaire de façon à former un intercalaire en paroi (44) dans l'ouverture; g) remplir l'ouverture du contact avec un matériau électroconducteur (56); h) conférer à la paroi intercalaire des propriétés électro-isolantes.
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