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1. WO1997026680 - GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE AND PROCESS FOR PRODUCING GALLIUM NITRIDE COMPOUND SEMICONDUCTOR

Publication Number WO/1997/026680
Publication Date 24.07.1997
International Application No. PCT/JP1997/000056
International Filing Date 14.01.1997
IPC
C30B 25/02 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02Epitaxial-layer growth
H01L 33/00 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
CPC
C30B 25/02
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
02Epitaxial-layer growth
C30B 29/406
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
40AIIIBV compounds ; wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
403AIII-nitrides
406Gallium nitride
H01L 33/007
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
005Processes
0062for devices with an active region comprising only III-V compounds
0066with a substrate not being a III-V compound
007comprising nitride compounds
H01L 33/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
32containing nitrogen
Applicants
  • MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. [JP]/[JP] (AllExceptUS)
  • ISHIBASHI, Akihiko [JP]/[JP] (UsOnly)
  • BAN, Yuuzaburou [JP]/[JP] (UsOnly)
  • TAKEISI, Hidemi [JP]/[JP] (UsOnly)
  • UEMURA, Nobuyuki [JP]/[JP] (UsOnly)
  • KUME, Masahiro [JP]/[JP] (UsOnly)
  • KIDOGUCHI, Isao [JP]/[JP] (UsOnly)
Inventors
  • ISHIBASHI, Akihiko
  • BAN, Yuuzaburou
  • TAKEISI, Hidemi
  • UEMURA, Nobuyuki
  • KUME, Masahiro
  • KIDOGUCHI, Isao
Agents
  • YAMAMOTO, Shusaku
Priority Data
8/2085407.02.1996JP
8/705819.01.1996JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE AND PROCESS FOR PRODUCING GALLIUM NITRIDE COMPOUND SEMICONDUCTOR
(FR) DISPOSITIF EMETTEUR DE LUMIERE A SEMI-CONDUCTEUR A BASE DE COMPOSES DE NITRURE DE GALLIUM ET PROCEDE DE FABRICATION D'UN SEMI-CONDUCTEUR A BASE DE COMPOSES DE NITRURE DE GALLIUM
Abstract
(EN)
A process for producing gallium nitride compound semiconductor includes the steps of forming a polycrystalline nitride layer (11a) on a substrate (10) in a first temperature range, forming a nucleus layer (11b) composed of a gallium nitride single crystal on the nitride layer (11a) in a second temperature range, growing the nucleus layer (11b) in a third temperature range so that the crystals of the layer (11b) can grow in the direction parallel to the surface of the substrate (10), and can join to each other, and growing the nucleus layer (11b) in the direction perpendicular to the surface of the substrate (10) in a fourth temperature range.
(FR)
Un procédé de fabrication d'un semi-conducteur à base de composés de nitrure de gallium consiste à former une couche de nitrure (11a) polycristallin sur un substrat (10), à une température appartenant à une première plage de température, à former une couche noyau (11b) composée d'un monocristal de nitrure de gallium sur la couche de nitrure (11a), à une température appartenant à une seconde plage de température, à étirer la couche noyau (11b), à une température appartenant à une troisième plage de température, de façon à ce que les cristaux de la couche (11b) puissent se développer suivant une direction parallèle à la surface du substrat (10), et puissent se rejoindre les uns les autres, et à étirer la couche noyau (11b) suivant la direction perpendiculaire à la surface du substrat (10), à une température appartenant à une quatrième plage de température.
Also published as
Latest bibliographic data on file with the International Bureau