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1. WO1997026591 - JUNCTION FIELD EFFECT VOLTAGE REFERENCE AND FABRICATION METHOD

Publication Number WO/1997/026591
Publication Date 24.07.1997
International Application No. PCT/US1997/001007
International Filing Date 16.01.1997
Chapter 2 Demand Filed 15.08.1997
IPC
G05F 3/24 2006.01
GPHYSICS
05CONTROLLING; REGULATING
FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
3Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
02Regulating voltage or current
08wherein the variable is dc
10using uncontrolled devices with non-linear characteristics
16being semiconductor devices
20using diode-transistor combinations
24wherein the transistors are of the field-effect type only
G05F 3/30 2006.01
GPHYSICS
05CONTROLLING; REGULATING
FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
3Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
02Regulating voltage or current
08wherein the variable is dc
10using uncontrolled devices with non-linear characteristics
16being semiconductor devices
20using diode-transistor combinations
30Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
CPC
G05F 3/247
GPHYSICS
05CONTROLLING; REGULATING
FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
3Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
02Regulating voltage or current
08wherein the variable is dc
10using uncontrolled devices with non-linear characteristics
16being semiconductor devices
20using diode- transistor combinations
24wherein the transistors are of the field-effect type only
242with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
247producing a voltage or current as a predetermined function of the supply voltage
G05F 3/30
GPHYSICS
05CONTROLLING; REGULATING
FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
3Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
02Regulating voltage or current
08wherein the variable is dc
10using uncontrolled devices with non-linear characteristics
16being semiconductor devices
20using diode- transistor combinations
30Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
Applicants
  • ANALOG DEVICES, INC. (ADI) [US]/[US]
Inventors
  • BOWERS, Derek, F.
  • TIPPIE, Larry, C.
Agents
  • WIEGAND, James, W.
Priority Data
08/587,54817.01.1996US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) JUNCTION FIELD EFFECT VOLTAGE REFERENCE AND FABRICATION METHOD
(FR) CIRCUITS DE REFERENCE DE TENSION A EFFET DE CHAMP A JONCTION ET PROCEDE DE FABRICATION
Abstract
(EN)
A JFET pair (J1, J2) having unequal pinchoff voltages is operated in saturation with equal source-drain current to channel width-to-length ratios to provide a reference voltage output. Positive or negative voltage references can be implemented using either n-channel or p-channel JFETs. The pinchoff voltage difference results from the channel for one JFET having a heavier doping level than that of the other JFET.
(FR)
La présente invention concerne une paire de transistors JFET (J1, J2) présentant un différentiel de tensions de pincement et utilisant pour fonctionner un courant source-drain donnant pour le canal des rapports largeur-longueur égaux de façon à constituer une tension de sortie de référence. On peut mettre en ÷uvre ces références de tension positive ou négative en employant des transistors JFET soit à canal n, soit à canal p. Le différentiel de tension de pincement provient du fait que le canal pour un transistor JFET présente un niveau de dopage plus important que celui concernant l'autre transistor JFET.
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