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1. WO1997025740 - IMPROVED PROCESS FOR METALS REMOVAL USING BETA-DIKETONE OR BETA-KETOIMINE LIGAND FORMING COMPOUNDS

Publication Number WO/1997/025740
Publication Date 17.07.1997
International Application No. PCT/US1997/000277
International Filing Date 07.01.1997
Chapter 2 Demand Filed 08.08.1997
IPC
C23F 1/12 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACES; INHIBITING CORROSION OF METALLIC MATERIAL; INHIBITING INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25247
1Etching metallic material by chemical means
10Etching compositions
12Gaseous compositions
H01L 21/306 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
CPC
C23F 1/12
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
1Etching metallic material by chemical means
10Etching compositions
12Gaseous compositions
H01L 21/02046
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02041Cleaning
02043Cleaning before device manufacture, i.e. Begin-Of-Line process
02046Dry cleaning only
Applicants
  • FSI INTERNATIONAL [US]/[US]
Inventors
  • BUTTERBAUGH, Jeffery, W.
  • GRAY, David, C.
Agents
  • STEINKRAUS, Walter, J.
Priority Data
08/584,17911.01.1996US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) IMPROVED PROCESS FOR METALS REMOVAL USING BETA-DIKETONE OR BETA-KETOIMINE LIGAND FORMING COMPOUNDS
(FR) PROCEDE AMELIORE D'ELIMINATION DE METAUX A L'AIDE DE COMPOSES DE BETA-DICETONE ET DE BETA-CETOIMINE GENERATEURS DE LIGANDS
Abstract
(EN)
UV irradiation enhances oxidation of metal and/or formation of sublimable ligand compounds using beta-diketone or beta-ketoimine ligand forming compounds. A UV/halogen gas or UV/ozone treatment can be used to efficiently oxidize the metallic material to a suitable form for reaction with the ligand forming compound and UV irradiation can be used during exposure to the ligand forming compound to enhance the formation of sublimable ligand compounds. Oxidization and ligand compound formation can be run sequentially or simultaneously. The process can be used for bulk metals removal, metal film patterning or trace metals removal.
(FR)
L'irradiation par les UV favorise l'oxydation des métaux et/ou la formation de complexes sublimables de ligands lorsqu'elle est associée à l'utilisation de composés de bêta-dicétone et de bêta-cétoïmine formateurs desdits ligands. On peut utiliser un traitement UV/halogène ou UV/ozone pour produire une oxydation suffisante pour en provoquer la réaction avec lesdits composés formateurs de ligands, l'irradiation par les UV pouvant se faire pendant l'exposition auxdits composés pour accroître la formation de complexes sublimables de ligands. L'oxydation et la formation des complexes de ligands peuvent avoir lieu à la suite ou simultanément. Le procédé peut servir pour l'extraction de métaux en quantité ou à l'état de traces ou pour tracer des motifs sur des films métalliques.
Also published as
Latest bibliographic data on file with the International Bureau