Processing

Please wait...

Settings

Settings

Goto Application

1. WO1997024758 - MICROWAVE POWER SOI-MOSFET WITH HIGH CONDUCTIVITY METAL GATE

Publication Number WO/1997/024758
Publication Date 10.07.1997
International Application No. PCT/IB1996/001403
International Filing Date 10.12.1996
IPC
H01L 21/336 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
CPC
H01L 29/66772
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
66742Thin film unipolar transistors
66772Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
H01L 2924/0002
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
0001Technical content checked by a classifier
0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applicants
  • PHILIPS ELECTRONICS N.V. [NL]/[NL]
  • PHILIPS NORDEN AB [SE]/[SE] (SE)
Inventors
  • KIM, Manjin, J.
Agents
  • HOUBIERS, Ernest, E., M., G.
Priority Data
08/580,40928.12.1995US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) MICROWAVE POWER SOI-MOSFET WITH HIGH CONDUCTIVITY METAL GATE
(FR) DISPOSITIF A MICRO-ONDES HAUTE PUISSANCE DU TYPE SOI-MOSFET AVEC UNE GRILLE EN METAL HAUTE CONDUCTIVITE
Abstract
(EN)
A technique for making a microwave, high power SOI-MOSFET device is set forth together with such a device. An important aspect of this structure is the presence of high conductivity metal gate fingers for the device. Other aspects of the structure are the forming of a retrograde doping profile in a thin silicon layer and the forming of a source region comprising a source shield.
(FR)
L'invention concerne un procédé pour réaliser un dispositif à micro-ondes haute puissance du type SOI-MOSFET, ainsi que le dispositif correspondant. Un aspect important de cette structure concerne la présence de doigts de grille en métal de haute conductivité. D'autres aspects de cette structure concernent la formation d'un profil de dopage rétrograde dans une couche mince de silicium et la formation d'une région source comprenant un écran de source.
Also published as
Latest bibliographic data on file with the International Bureau