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1. WO1997024753 - THIN-FILM TRANSISTOR AND METHOD FOR THE DEPOSIT OF AT LEAST ONE SEMICONDUCTOR FILM FOR ITS MANUFACTURE

Publication Number WO/1997/024753
Publication Date 10.07.1997
International Application No. PCT/CH1996/000465
International Filing Date 24.12.1996
Chapter 2 Demand Filed 28.07.1997
IPC
H01L 21/205 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 29/786 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
H01L 31/0352 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0352characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 31/075 2012.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
06characterised by at least one potential-jump barrier or surface barrier
075the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
H01L 31/20 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
20such devices or parts thereof comprising amorphous semiconductor material
CPC
H01L 21/02422
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
0237Materials
02422Non-crystalline insulating materials, e.g. glass, polymers
H01L 21/0245
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02436Intermediate layers between substrates and deposited layers
02439Materials
02441Group 14 semiconducting materials
0245Silicon, silicon germanium, germanium
H01L 21/02532
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02524Group 14 semiconducting materials
02532Silicon, silicon germanium, germanium
H01L 21/0262
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02612Formation types
02617Deposition types
0262Reduction or decomposition of gaseous compounds, e.g. CVD
H01L 21/02658
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02656Special treatments
02658Pretreatments
H01L 29/78675
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
78651Silicon transistors
7866Non-monocrystalline silicon transistors
78672Polycrystalline or microcrystalline silicon transistor
78675with normal-type structure, e.g. with top gate
Applicants
  • UNIVERSITE DE NEUCHATEL [CH]/[CH] (AllExceptUS)
  • MEIER, Johann [CH]/[CH] (UsOnly)
  • KROLL, Ulrich [DE]/[CH] (UsOnly)
Inventors
  • MEIER, Johann
  • KROLL, Ulrich
Agents
  • NITHARDT, Roland
Priority Data
96/0010502.01.1996FR
Publication Language French (FR)
Filing Language French (FR)
Designated States
Title
(EN) THIN-FILM TRANSISTOR AND METHOD FOR THE DEPOSIT OF AT LEAST ONE SEMICONDUCTOR FILM FOR ITS MANUFACTURE
(FR) TRANSISTOR A COUCHES MINCES ET PROCEDE DE DEPOT D'AU MOINS UNE COUCHE SEMI-CONDUCTRICE POUR LA REALISATION DE CE TRANSISTOR
Abstract
(EN)
The transistor (80) comprises a substrate (81), a gate (82), a source (83), a drain (84), an insulating layer (85) and a semiconductor layer (86). The semiconductor layer is made up of microcrystalline hydrogenated silicon containing very little oxygen. The low oxygen content makes it possible to form a microcrystalline film with few defects requiring doping, which means it can be used for thin-film transistors. The typical oxygen content for such films is around 1018 atoms per cm3. The method consists in placing the substrate (81) in a deposition chamber, creating a vacuum in that chamber, purifying the deposition gases using purification means, introducing these purified gases into the chamber, then creating a plasma between two electrodes. A film coating of intrinsic microcrystalline silicon is then deposited on the substrate.
(FR)
Le transistor (80) comporte un substrat (81), une grille (82), une source (83), un drain (84), une couche isolante (85) et une couche semi-conductrice (86). La couche semi-conductrice est constituée de silicium hydrogéné microcristallin contenant peu d'oxygène. La diminution de l'oxygène permet de réaliser une couche microcristalline présentant peu de défauts entraînant un dopage, ce qui permet son utilisation dans un transistor à couches minces. Les valeurs typiques du contenu en oxygène d'une telle couche sont de l'ordre de 1018 atomes par cm3. Le procédé consiste à placer le substrat (81) dans une chambre de dépôt, à faire le vide dans cette chambre de dépôt, à purifier des gaz de dépôt par l'intermédiaire des moyens de purification, à introduire ces gaz purifiés dans la chambre, puis à produire un plasma entre deux électrodes. Une couche de silicium microcristallin intrinsèque se dépose alors sur le substrat.
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